Improved Oxide Etching by the Enhanced Inductively Coupled Plasma

概要

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In dry etch process of high aspect ratio deep contact or self sligned contact formation, it is known that the generation of active species for etching reaction and the formation of passivation layers on Si or photoresist are important to achieve higher selectivity with high etch rate. As a simple novel method, the enhanced ICP (E-ICP) is proposed and is expected to control the plasma characteristics such as electron temperature and relative ion densities by changing its E-ICP frequency. We tested the feasibility of E-ICP for the process of contact hole etching by comparing the etching characteristics of other types of ICP's Etch rate and SEM images of etched profiles of 1.0 and 0.3 micrometer contact holes are compared. It is found that E-Icp gives larger etch rate than that of conventional ICP and better etch profile than that of magnetized ICP.
社団法人電子情報通信学会の論文
2001-06-28