Improved Oxide Etching by the Enhanced Inductively Coupled Plasma (2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices(AWAD 2001))
スポンサーリンク
概要
- 論文の詳細を見る
- 電子情報通信学会の論文
- 2001-07-05
著者
-
Cho S.-b.
Inha University Incheon Korea
-
Song Ho-young
M-parc School Of Information And Communication Engineering Inha University
-
Park Se-geun
M-parc School Of Information And Communication Engineering Inha University
-
Song H.-y.
Inha University Incheon Korea
-
Park S.-g.
Inha University Incheon Korea
関連論文
- Effect of Time-varying Axial Magnetic Field on High Aspect Ratio SiO_2 Etching in an Inductively Coupled Plasma
- Effect of Time-varying Axial Magnetic Field on High Aspect Ratio SiO_2 Etching in an Inductively Coupled Plasma
- Improved Oxide Etching by the Enhanced Inductively Coupled Plasma
- Improved Oxide Etching by the Enhanced Inductively Coupled Plasma
- Improved Oxide Etching by the Enhanced Inductively Coupled Plasma (2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices(AWAD 2001))