Effect of Time-varying Axial Magnetic Field on High Aspect Ratio SiO_2 Etching in an Inductively Coupled Plasma
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概要
- 論文の詳細を見る
Low frequency weak magnetic field is applied axially to an inductively coupled plasma (ICP). Efficient power transfer from RF source to plasma is enhanced by the axial magnetic field. High aspect ratio deep-sub-micron contact holes in BPSG have been etched by C_4F_8/Ar plasma. The role of deposition of polymeric precursors in the etching process is monitored. By means of appearance mass spectroscopy (AMS), the distributions of fluorocarbon ions (CF^+_x; x=1-3) and CF_x radicals are measured as a function of magnetization frequency. The axial magnetic field is found to influence the densities of CFX^+_x ions and F and CF_x radicals. X-ray photoelectron spectroscopy (XPS) shows that fluorocarbon polymer on BPSG layer strongly varies with the magnetization frequency. Contact holes of 0.1 μm diameter with aspect ratio of 10 are successfully fabricated in this system.
- 社団法人電子情報通信学会の論文
- 2002-06-24
著者
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Oh Jin-sung
R&d Division Hynix Semiconductor Inc.
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Kim J.-w.
Inha University Incheon Korea
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Choi Yong-hee
M-parc School Of Information And Communication Engineering Inha University
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KIM Jin-Woong
R&D Division, Hynix Semiconductor Inc.
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Kim Jin-woong
R&d Division Hynix Semiconductor Inc.
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Song Ho-young
M-parc School Of Information And Communication Engineering Inha University
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Park Se-geun
M-parc School Of Information And Communication Engineering Inha University
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O Beom-hoan
M-parc School Of Information And Communication Engineering Inha University
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Oh Jin-Sung
R&D Division, Hynix Semiconductor Inc.
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Oh J‐s
R&d Division Hynix Semiconductor Inc.
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- Effect of Time-varying Axial Magnetic Field on High Aspect Ratio SiO_2 Etching in an Inductively Coupled Plasma
- Effect of Time-varying Axial Magnetic Field on High Aspect Ratio SiO_2 Etching in an Inductively Coupled Plasma
- Improved Oxide Etching by the Enhanced Inductively Coupled Plasma
- Improved Oxide Etching by the Enhanced Inductively Coupled Plasma
- Improved Oxide Etching by the Enhanced Inductively Coupled Plasma (2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices(AWAD 2001))