Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide
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概要
- 論文の詳細を見る
We studied the effect of selective oxidation conditions on gate oxide characteristics. Selective oxidation in hydrogen-rich wet ambient at 850°C–950°C was found to generate defects both at the SiO2/Si interface and in oxide bulk, resulting in a higher stress-induced leakage current. The degradation of the device can be explained by the incorporation of hydrogen into the gate oxide during a high-temperature selective oxidation process. The plasma reoxidation process induced fewer defects due to radical oxidation at low temperature.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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Cho Heung-jae
Memory R&d Division Hynix Semiconductor Inc.
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Lim Kwan-yong
Memory R&d Division Hynix Semiconductor Inc.
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Yang Hong-seon
Memory R&d Division Hynix Semiconductor Inc.
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Oh Jae-geun
Memory R&d Division Hynix Semiconductor Inc.
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Jang Se-aug
Memory R&d Division Hynix Semiconductor Inc.
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Lee Jung-ho
Memory R&d Division Hynix Semiconductor Inc.
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Sohn Hyun-chul
Memory R&d Division Hynix Semiconductor Inc.
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Kim Yong
Memory R&d Division Hynix Semiconductor Inc.
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Sohn Hyun-Chul
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
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Oh Jae-Geun
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
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