Characteristics of TaO_xN_y Gate Dielectric with Improved Thermal Stability
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-01
著者
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CHO Heung-Jae
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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PARK Dae-Gyu
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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YEO In-Seok
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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PARK Jin
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co. Ltd.
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Cho Heung-jae
Memory R&d Division Hynix Semiconductor Inc.
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Yeo In-seok
Advanced Process Team Memory R&d Div. Hynix Semiconductor Inc.
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Yeo In-seok
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Cho Heung-jae
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Park Dae-gyu
Memory R&d Division Hynix Semiconductor. Inc.
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Park Dae-gyu
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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ROH Jae-Sung
Advanced Process Team, Memory R&D Division, Hyundai Electronics Industries Co., Ltd.
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Roh J‐s
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Roh J
Memory Research And Development Division Hynix Semiconductor Inc.
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Roh Jae-sung
Advanced Process-capacitor Memory Research & Development Division Hyundai Electronics Industries
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Park Jin
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Yeo I‐s
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Park J
Hyundai Microelectronics Co. Ltd. Chungju Kor
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Roh Jae-sung
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Roh J‐s
Memory Research And Development Division Hynix Semiconductor Inc.
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