A 0.25 μm Complementary Metal Oxide Semiconductor Field Effect Transistor (CMOSFET)using Halo Implantation for 1 Gbit Dynamic Random Access Memory (DRAM)
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概要
- 論文の詳細を見る
- 1996-02-01
著者
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Park Jin
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Lee K
Basic Research Team Semiconductor R & D Center Samsung Electronics Co. Ltd.
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JUNG Dong
Basic Research Team, Semiconductor R & D Center, Samsung Electronics, Co., Ltd.
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PARK Jae
Basic Research Team, Semiconductor R & D Center, Samsung Electronics, Co., Ltd.
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LEE Kang
Basic Research Team, Semiconductor R & D Center, Samsung Electronics, Co., Ltd.
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KANG Nam
Basic Research Team, Semiconductor R & D Center, Samsung Electronics, Co., Ltd.
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KIM Ki
Basic Research Team, Semiconductor R & D Center, Samsung Electronics, Co., Ltd.
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SHIM Tae
Basic Research Team, Semiconductor R & D Center, Samsung Electronics, Co., Ltd.
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PARK Jong
Basic Research Team, Semiconductor R & D Center, Samsung Electronics, Co., Ltd.
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Kim K
Basic Research Team Semiconductor R & D Center Samsung Electronics Co. Ltd.
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Shim Tae
Basic Research Team Semiconductor R & D Center Samsung Electronics Co. Ltd.
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Kang Nam
Basic Research Team Semiconductor R & D Center Samsung Electronics Co. Ltd.
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Park J
Basic Research Team Semiconductor R & D Center Samsung Electronics Co. Ltd.
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Lee Kang
Basic Research Team Semiconductor R & D Center Samsung Electronics Co. Ltd.
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Jung Dong
Basic Research Team Semiconductor R & D Center Samsung Electronics Co. Ltd.
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Park Jae
Basic Research Team Semiconductor R & D Center Samsung Electronics Co. Ltd.
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