Characterization of Amorphous Phases of Ge_2Sb_2Te_5 Phase-Change Optical Recording Material on Their Crystallization Behavior
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-08-15
著者
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Park J
Memory R&d Center Hyundai Electronics Industries Co. Ltd.
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Park Jin
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Park J
Yonsei Univ. Seoul Kor
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Park Jin
R&d Division Lg Semicon. Co. Ltd.
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Kim M
Seoul National Univ. Seoul Kor
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Park Jeongwoo
Devices And Materials Laboratory Lg Corporate Institute Of Technology
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Park J
豊橋技科大
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Choi W
Korea Advanced Inst. Sci. And Technol. Daejeon Kor
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Kim Myong
Devices & Materials Research Lab., LG Corporate Institute of Technology
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Choi Woo
Devices & Materials Research Lab., LG Corporate Institute of Technology
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Seo Hun
Devices & Materials Research Lab., LG Corporate Institute of Technology
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Yeon Cheong
Devices & Materials Research Lab., LG Corporate Institute of Technology
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Park Jaehyuk
Department Of Electrical & Electronic Engineering. Toyohashi University Of Technology
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Park J
Hyundai Microelectronics Co. Ltd. Chungju Kor
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Yeon C
Devices And Materials Laboratory Lg Corporate Institute Of Technology
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Park Jin
Semiconductor R&d Goldstar Electron Co. Ltd.
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Seo H
School Of Science And Engineering Waseda University:crest Jst (japan Science And Technology Corporat
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Kim Myong
Devices And Materials Lab. Lg Corporate Institute Of Technology
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