Highly Sensitive MOSFET Gas Sensors with Porous Platinum Gate Electrode
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-03-30
著者
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Fukuda H
Hitachi Ltd. Kokubunji Jpn
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Fukuda Hisashi
Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Te
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Nomura Shigeru
Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Te
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KASAMA Kouichirou
Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Te
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SEO Hiroaki
Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Te
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ENDOH Toshiaki
Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Te
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Seo H
School Of Science And Engineering Waseda University:crest Jst (japan Science And Technology Corporat
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Endoh T
Department Of Electrical And Electronic Engineering Faculty Of Engineering Muroran Institute Of Tech
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Nomura Shigeru
Department Of Electrical And Electronic Engineering Faculty Of Engineering Muroran Institute Of Tech
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Kasama Kouichirou
Department Of Electrical And Electronic Engineering Faculty Of Engineering Muroran Institute Of Tech
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Fukuda Hisashi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Muroran Institute Of Tech
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Kasama Kouichiro
Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology
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