Highly Sensitive Metal-Insulator-Semiconductor Field-Effect Transistor Sensors for Detecting Carbon Monoxide Gas Using Porous Platinum and Tungsten Oxide Thin Films
スポンサーリンク
概要
- 論文の詳細を見る
A novel device based on a porous Pt–WO3 metal-insulator-semiconductor field-effect transistor (MISFET) for carbon monoxide (CO) gas sensing has been fabricated. The structure integrates the catalytic properties of porous Pt as a thin catalytic layer, and the spillover effect onto WO3 film as a gas adsorptive oxide layer, with surface-sensitive MISFET@. The operation characteristics of the device for the detection of CO gas are presented as a function of CO gas concentration. The drain current increased rapidly with time depending on the CO gas concentration. It was possible to detect 54 ppm of CO gas with a response time of less than 1 min at 75°C. A model was proposed to explain the operation. The sensing mechanism of the device is supported well by experimental data.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-30
著者
-
Nomura Shigeru
Department Of Electrical And Electronic Engineering Faculty Of Engineering Muroran Institute Of Tech
-
Zohnishi Ryuji
Department Of Electrical And Electronic Engineering Faculty Of Engineering Muroran Institute Of Tech
-
Fukuda Hisashi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Muroran Institute Of Tech
-
Zohnishi Ryuji
Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto, Muroran, Hokkaido 050-8585, Japan
関連論文
- Structural and Electrical Properties of Crystalline TiO_2 Thin Films Formed by Metalorgarnic Decomposition
- Structure Control of Ferroelectric Pb(Zr, Ti)O_3 Films Using SrTiO_3 Buffer Layer Prepared by Metalorganic Decomposition
- Interaction of Porous Pt-SnO_2 Gate Metal-Oxide-Semiconductor Field-Effect Transistor Device with CO
- Highly Sensitive MOSFET Gas Sensors with Porous Pt-SnO_x Gate Electrode for CO Sensing Applications
- Structural and Electrical Properties of Crystalline CeO_2 Films Formed by Metalorganic Decomposition
- Highly Sensitive MOSFET Gas Sensors with Porous Platinum Gate Electrode
- Highly Sensitive MOSFET Gas Sensors with Porous Platinum Gate Electrode
- Growth Kinetics of Ultrathin Silicon Dioxide Films Formed by Rapid Thermal Oxidation
- Nitrogen Profile in SiO_xN_y Prepared by Thermal Nitridation of Ozone Oxide
- Highly Sensitive Metal-Insulator-Semiconductor Field-Effect Transistor Sensors for Detecting Carbon Monoxide Gas Using Porous Platinum and Tungsten Oxide Thin Films
- Highly Sensitive MISFET Sensors for Detecting CO Gas Using Porous Platinum and Tungsten Oxide Thin Films
- Effect of Fowler-Nordheim Stress on Charge Trapping Properties of Ultrathin N_2O-Oxynitrided SiO_2 Films
- n-Channel Organic Thin-Film Transistors based on Naphthalene--Bis(dicarboximide) Polymer for Organic Transistor Memory Using Hole-Acceptor Layer
- Si MIS Solar Cells by Anodization
- Synthesis of High Dielectric Constant Titanium Oxide Thin Films by Metalorganic Decomposition
- Angular Distribution of Scattered Electron and Medium Energy Electron Spectroscopy for Metals
- Effect of the α-glucosidase inhibitor miglitol on the glucose profile in Japanese type 2 diabetic patients receiving multiple daily insulin injections
- Electrical Properties of ($1-x$)Ta2O5–$x$TiO2 Crystalline Thin Films Prepared by Metalorganic Decomposition
- Highly Sensitive Metal-Insulator-Semiconductor Field-Effect Transistor Sensors for Detecting Carbon Monoxide Gas Using Porous Platinum and Tungsten Oxide Thin Films
- Molecular Orientation and Electromagnetic Properties of Perhydrogenated and Perfluorinated Copper Phthalocyanine Thin Films
- Comparison of daily glucose excursion by continuous glucose monitoring between type 2 diabetic patients receiving preprandial insulin aspart or postprandial insulin glulisine