Effect of Fowler-Nordheim Stress on Charge Trapping Properties of Ultrathin N_2O-Oxynitrided SiO_2 Films
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-01-15
著者
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Fukuda Hisashi
Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Te
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Nomura Shigeru
Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Te
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Nomura Shigeru
Department Of Electrical And Electronic Engineering Faculty Of Engineering Muroran Institute Of Tech
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Fukuda Hisashi
Department Of Electrical And Electronic Engineering Muroran Institute Of Technology
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Fukuda Hisashi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Muroran Institute Of Tech
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