Electrical Properties of ($1-x$)Ta2O5–$x$TiO2 Crystalline Thin Films Prepared by Metalorganic Decomposition
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概要
- 論文の詳細を見る
Polycrystalline ($1-x$)Ta2O5–$x$TiO2 thin films were formed on a Si substrate by metalorganic decomposition (MOD) at an annealing temperature of 900°C. Thin films with 0.92Ta2O5–0.08TiO2 ($x=0.08$) composition exhibited superior insulating properties compared to other compositions. The main reason for the improvement in the insulating properties could be the charge compensation of excess oxygen by the TiO2 additive. The leakage current density was lower than $1\times 10^{-9}$A/cm2 up to an applied electric field of 3 MV/cm. The bulk-limited Poole-Frenkel conduction dominates the current–voltage characteristics. capacitance–voltage characteristics of these films showed good dielectric properties with a maximum dielectric constant of 16 and a charge-storage density of 42.5 fC/$\mu$m2 at 3 MV/cm.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2001-03-15
著者
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Salam K.
Department Of Electrical And Electronic Engineering Faculty Of Engineering Muroron Institute Of Tech
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Nomura Shigeru
Department Of Electrical And Electronic Engineering Faculty Of Engineering Muroran Institute Of Tech
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Mizuno Masahiro
Department Of Chemistry And Material Engineering Faculty Of Engineering Shinshu University
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Fukuda Hisashi
Department Of Electrical And Electronic Engineering Faculty Of Engineering Muroran Institute Of Tech
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Fukuda Hisashi
Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto, Muroran, Hokkaido 050-8585, Japan
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Konishi Hidekazu
Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto, Muroran, Hokkaido 050-8585, Japan
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Salam K.
Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto, Muroran, Hokkaido 050-8585, Japan
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