n-Channel Organic Thin-Film Transistors based on Naphthalene--Bis(dicarboximide) Polymer for Organic Transistor Memory Using Hole-Acceptor Layer

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An investigation of threshold voltage shifts in organic thin-film transistors (OTFTs) based on poly{[N,N$\aku '$-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5$'$-(2,2$'$-bithiophene)} [P(NDI2OD-T2)] with additional poly(3-hexylthiophene) (P3HT) films on a poly(methyl methacrylate) (PMMA) organic dielectric layer is reported. With a top source-drain contact structure, the device exhibited a unipolar property with n-channel characteristics similar to those of the P(NDI2OD-T2)-only device. Furthermore, the existence of P3HT films as hole acceptor-like storage layers resulted in reversible $V_{\text{th}}$ shift upon the application of external gate bias ($V_{\text{bias}}$) for a certain bias time ($T_{\text{bias}}$). Hence, the P(NDI2OD-T2)/P3HT-OTFTs exhibited a large memory window ($\Delta V_{\text{th}} = 10.7$ V) for write and erase electrically without major degradation in saturation mobility [$\mu_{\text{sat}} = (1.8{\mbox{--}}2.8) \times 10^{-4}$ cm2 V-1 s-1]. These results clearly indicate the utility of the naphthalene--bis(dicarboximide) (NDI)-based polymer--hole acceptor layer in the development of n-channel organic transistor memories.
2011-09-25