Nanometer-Scale Deposition of Ga on INF-Treated Si(111) Surfaces throughthe Decomposition of Triethylgallium by Scanning Tunneling Microscopy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-06-15
著者
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SAKATA Kiyoshi
Department of Public Health, Wakayama Medical University
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Sakata K
Kyoto Univ. Kyoto Jpn
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YAO Takafumi
Department of Physics, Faculty of Science Tohoku University
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Kawano Senji
Department Of Electrical Engineering Hiroshima University
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UESUGI Katsuhiro
Department of Electrical Engineering, Hiroshima University
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YOSHIMURA Masamichi
Department of Electrical Engineering, Hiroshima University
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Yao Takafumi
Department Of Electrical Engineering Hiroshima University
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Yao Takafumi
Institute For Materials Research Tohoku University
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Sakata Kiyoshi
Department Of Electrical Engineering Hiroshima University
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吉村 昌弘
Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni
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Yoshimura Masamichi
Department Of Applied Physics The University Of Tokyo:(present Address) Department Of Electrical Eng
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Uesugi Katsuhiro
Department Of Electrical Engineering Hiroshima University
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