A Resonant-Type GaAs Switch IC with Low Distortion Characteristics for 1.9GHz PHS (Special Issue on Microwave and Millimeterwave High-power Devices)
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概要
- 論文の詳細を見る
A GaAs SPDT switch IC operating at a low power supply voltage of 2.7V has been developed for use in 1.9GHz band personal handy phone system (PHS). In combination with MESFETs with low on-resistance and high breakdown voltage, the switch IC adopts parallel-LC resonant circuits and utilizes both stacked FETs and an additional shunt capacitor at the receiver side in order to realize low insertion loss, high isolation and low distortion characteristics. An insertion loss of 0.55dB and an isolation of 35.8dB were obtained at 1.9GHz. The IC also achieved an output power of 25.0dBm at 1dB gain compression point, a second order distortion of -54.3dBc and an adjacent channel leakage power of -66dBc at 600kHz apart from 1.9GHz at 19dBm output power.
- 社団法人電子情報通信学会の論文
- 1997-06-25
著者
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吉村 昌弘
東工大・工材研
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Ikeda Y
Mitsubishi Electric Corporation Information Technology R&d Center
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Ikeda Y
Mitsubishi Electric Corp. Kamakura‐shi Jpn
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Uchitomi N
Research And Development Center Toshiba Corp.
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Uchitomi Naotaka
Research And Development Center Toshiba Corporation
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Ishida Koichi
Optoelectronics Joint Research Laboratory:(present Address) Fundamental Research Laboratories Nec Co
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亀山 敦
神奈川大学工学部化学教室
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Ishida K
Semiconductor System Engineering Center Toshiba Corporation
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KAMEYAMA Atsushi
Research and Development Center, TOSHIBA CORPORATION
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KAWAKYU Katsue
Research and Development Center, TOSHIBA CORPORATION
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IKEDA Yoshiko
Research and Development Center, TOSHIBA CORPORATION
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NAGAOKA Masami
Research and Development Center, TOSHIBA CORPORATION
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ISHIDA Kenji
Semiconductor System Engineering Center, TOSHIBA CORPORATION
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NITTA Tomohiro
Research and Development Center, TOSHIBA CORPORATION
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YOSHIMURA Misao
Research and Development Center, TOSHIBA CORPORATION
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KITAURA Yoshiaki
Research and Development Center, TOSHIBA CORPORATION
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Nagaoka M
Research And Development Center Toshiba Corp.
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Kitaura Y
Research And Development Center Toshiba Corp.
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Yoshimura Misao
Research And Development Center Toshiba Corp.
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Ishida Kohtaro
Department Of Physics Science University Of Tokyo
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Ishida K
Yamagata Univ. Yamagata Jpn
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Kawakyu Katsue
Toshiba Corp. Research And Development Center
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吉村 昌弘
Division Of Electric Electronic And Information Engineering Graduate School Of Engineering Osaka Uni
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Ishida Kenji
Semiconductor System Engineering Center Toshiba Corporation
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Nitta T
Research And Development Center Toshiba Corporation
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Nitta Tomohiro
Research And Development Center Toshiba Corporation
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Kitaura Yoshiaki
Research And Development Center Toshiba Corp.
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石田 謙司
神戸大学 大学院工学研究科
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Nagaoka Masami
Research and Development Center, Toshiba Corp.
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