A C-Ku Band 5-Bit MMIC Phase Shifter Using Optimized Reflective Series/Parallel LC Circuits(Active(Phase Shifter))(<Special Issue>Recent Trends on Microwave and Millimeter Wave Application Technology)
スポンサーリンク
概要
- 論文の詳細を見る
A C-Ku band 5-bit MMIC phase shifter using optimized reflective series/parallel LC circuits is presented. The proposed circuit has frequency independent characteristics in the case of 180° phase shift, ideally. Also, an ultra-broad-band circuit design theory for the 180° optimized reflective circuit has derived, which gives optimum characteristics compromising between loss and phase shift error. The fabricated 5-bit MMIC phase shifter with SPDT switch has successfully demonstrated a typical insertion loss of 9.4dB ± 1.4dB, and a maximum RMS phase shift error of 7° over the 6 to 18GHz band. The measured results validate the proposed design theory of the phase shifter.
- 社団法人電子情報通信学会の論文
- 2003-12-01
著者
-
Ikeda Y
Mitsubishi Electric Corporation Information Technology R&d Center
-
Ikeda Y
Mitsubishi Electric Corp. Kamakura‐shi Jpn
-
Takagi T
Optical Interconnection Sumiden Laboratory Rwcp
-
TAKAGI Tadashi
Information Technology R&D Center, Mitsubishi Electric Corporation
-
ISHIDA Osami
Information Technology R&D Center, Mitsubishi Electric Corporation
-
Hieda Morishige
Information Technology R&d Center Mitsubishi Electric Corporation
-
Takagi T
Research Institute Of Electrical Communication Tohoku University
-
Takagi T
It-21 Center Research Institute Of Electrical Communications Tohoku University
-
MIYAGUCHI Kenichi
Information Technology R&D Center, Mitsubishi Electric Corporation
-
IYAMA Yoshitada
Kamakura Works, Mitsubishi Electric Corporation
-
TARUI Yukinobu
Kamakura Works, Mitsubishi Electric Corporation
-
HATAMOTO Mikio
Kamakura Works, Mitsubishi Electric Corporation
-
KANAYA Koh
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation
-
Takagi Tadashi
Information Technology R&d Center Mitsubishi Electric Corporation
-
Ishida O
Information And Communications Univ. Daejon Kor
-
Ishida Osami
Information And Communications University
-
Iyama Y
Kamakura Works Mitsubishi Electric Corporation
-
Kanaya K
High Frequency & Optical Semiconductor Division Mitsubishi Electric Corporation
-
Tarui Y
Kamakura Works Mitsubishi Electric Corporation
-
Hatamoto Mikio
Kamakura Works Mitsubishi Electric Corporation
-
Miyaguchi Kenichi
Information Technology R&d Center Mitsubishi Electric Corporation
-
Hieda Morishige
Information Technol. Res. And Dev. Center Mitsubishi Electric Corp.
関連論文
- A Q-Band High Gain, Low Noise Variable Gain Amplifier Using Dual Gate AlGaAs/InGaAs Pseudomorphic HEMTs
- GaAs 10 Gb/s 64:1 Multiplexer/Demultiplexer Chip Sets (Special Issue on Ultra-High-Speed LSIs)
- A Resonant-Type GaAs Switch IC with Low Distortion Characteristics for 1.9GHz PHS (Special Issue on Microwave and Millimeterwave High-power Devices)
- Fiber-Grating Semiconductor Laser Modules for Dense-WDM Systems (Joint Special Issue on Photonics in Switching : Systems and Devices)
- Fiber-Grating Semiconductor Laser Modules for Dense-WDM Systems (Joint Special Issue on Photonics in Switching : Systems and Devices)
- An 18 GHz-Band MMIC Diode Linearizer Using a Parallel Capacitor with a Bias Feed Resistance(Special Issue on Microwave and Millimeter Wave Technology)
- A GSM900/DCS1800 Dual-Band MMIC Power Amplifier Using Outside-Base/Center-Via-Hole Layout Multifinger HBT (Special Issue on High-Frequency/speed Devices in the 21st Century)
- A Low Quiescent Current CV/CC Parallel Operation HBT Power Amplifier for W-CDMA Terminals(Special Issue on Microwave and Millimeter Wave Technology)
- Low Quiescent Current SiGe HBT Driver Amplifier Having Self Base Bias Control Circuit(Special Issue on Silicon RF Device & Integrated Circuit Technologies)
- Single 3-V Supply Operation GaAs Linear Power MESFET Amplifier for 5.8-GHz ISM Band Applications (Special Issue on Microwave and Millimeter Wave Technology)
- A 2-V Operation Resonant-Type T/R-Switch with Low Distortion Characteristics for 1.9-GHz PHS(Special Issue on Microwave and Millimeter-Wave Module Technology)
- A Buried-Channel WN_x/W Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for Single-Chip Front-End MMIC in Personal Handy Phone System
- Millimeter-Wave Monolithic AlGaAs/InGaAs/GaAs Pseudomorphic HEMT Low Noise Amplifier Modules for Advanced Microwave Scanning Radiometer
- An Even Harmonic Quadrature Mixer with a Simple Filter Configuration and an Integrated LTCC Module for W-CDMA Direct Conversion Receiver(Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
- An Even Harmonic Mixer Using Self-Biased Anti-Parallel Diode Pair(Special Issue on Microwave and Millimeter Wave Technology)
- Efficiency Enhancement of a Digital Predistortion Doherty Amplifier Transmitter Using a Virtual Open Stub Technique(Active Devices/Circuits,Microwave and Millimeter-Wave Technology)
- A Compact Ku-Band 5-Bit MMIC Phase Shifter(Active(Switch))(Recent Trends on Microwave and Millimeter Wave Application Technology)
- A C-Ku Band 5-Bit MMIC Phase Shifter Using Optimized Reflective Series/Parallel LC Circuits(Active(Phase Shifter))(Recent Trends on Microwave and Millimeter Wave Application Technology)
- A C-Ku Band 5-Bit MMIC Phase Shifter Using Optimized Reflective Series/Parallel LC Circuits
- Feedforward Power Amplifier Control Method Using Weight Divided Adaptive Algorithm(Special Issue on Microwave and Millimeter Wave Technology)
- A High Efficiency Bias Condition Optimized Feedforward Power Amplifier with a Series Diode Linearizer(Special Issue on Low-Distortion, High-Power, High-Efficiency Active Device and Circuit Technology)
- An L-Band High Efficiency and Low Distortion Multi-Stage Amplifier Using Self Phase Distortion Compensation Technique(Special Issue on Low-Distortion, High-Power, High-Efficiency Active Device and Circuit Technology)
- Si Substrate Resistivity Design for On-Chip Matching Circuit Based on Electro-Magnetic Simulation
- A Large-Signal Simulation Program for Multi-Stage Power Amplifier Modules by Using a Novel Interpolation
- An Efficient Large-Signal Modeling Method Using Load-Line Analysis and Its Application to Non-linear Characterization of FET
- A Distortion Analysis Method for FET Amplifiers Using Novel Frequency-Dependent Complex Power Series Model (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
- A 1.9GHz Single-Chip RF Front-End GaAs MMIC with Low-Distortion Cascode FET Mixer (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
- Intermodulation Distortion of Low Noise Silicon BJT and MOSFET Fabricated in BiCMOS Process (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
- A Calculation Method of Large-Signal Characteristics of Multi-Stage Power Amplifier Modules Using Source-Pull and Load-Pull Data(Special Issue on Microwave and Millimeter-Wave Module Technology)
- Improvement of Adjacent Channel Leakage Power and Intermodulation Distortion by Using a GaAs FET Linearizer with a Large Source Inductance (Special Issue on Microwave and Millimeterwave High-power Devices)
- L-Band SPDT Switch Using Si-MOSFET (Special Issue on Microwave Devices for Mobile Communications)
- A New GaAs Negative Voltage Generator for a Power Amplifier Applied to a Single-Chip T/R-MMIC Front-End
- A 270 GHz-Band Planer Type MMIC Image Rejection SIS Mixer(Special Issue on Microwave and Millimeter Wave Technology)
- Wideband Contiguous-Band Diplexer Using Interpolated Coupling Coefficient Bandpass Filters
- A Low-Loss Serial Power Combiner Using Novel Suspended Stripline Couplers(Recent Trends of Microwave and Millimeter-Wave Passive Circuit Components and Technologies for Improvement of Characteristics)
- Low Spurious Frequency Setting Algorithm for a Triple Tuned Type PLL Synthesizer Driven by a DDS(Special Issue on Signals, Systems and Electronics Technology)
- Distortion Characteristics of an Even Harmonic Type Direct Conversion Receiver for CDMA Satellite Communications (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
- A Wideband Monolithic Lossy Match Power Amplifier Having an LPF/HPF-Combined Interstage Network
- Analysis of High Power Amplifier Instability due to f_0/2Loop Oscillation
- ANALYSIS AND APPLICATIONS OF HIGH-DENSITY PERIODIC SUBSTRATE PBG MICROSTRIP CIRCUITS
- C-2-55 Efficiency Optimization of Feedforward Low Distortion Amplifier
- A New Coding Scheme for Infrared ASK Communication Systems Which Have Zero-Spectrum Points within the Main-Lobe Region (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- A New Coding Scheme for Infrared ASK Communication Systems Which Have Zero-Spectrum Points within the Main-Lobe Region (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Aiming for SIS Mixers Using Ba_<1-x>K_xBiO_3 Bicrystal Junctions (Special Issue on Basic Properties and Applications of Superconductive Electron Devices)
- Highly Stable 6-18 GHz 2.3 dB Low-Noise Amplifier with Resistive-Loaded Series Feedback Circuits(Amplifier)(Recent Trends on Microwave and Millimeter Wave Application Technology)
- A 4-12 GHz 2 W GaAs HFET Amplifier Using Pre-Matching Circuits for Dual Gate-Bias Feed and Tapered Power Splitting/Combining FETs(Special Issue on Low-Distortion, High-Power, High-Efficiency Active Device and Circuit Technology)
- A 2W High Efficiency 4-12GHz GaAs HFET MMIC Power Amplifier
- Direct Efficiency and Power Calculation Method and Its Application to Low Voltage High Efflciency Power Amplifier
- Millimeter-Wave High-Power MMIC Switch with Multiple FET Resonators(Active Devices/Circuits,Microwave and Millimeter-Wave Technology)
- Improving Generalization Performance by Information Minimization
- High-Power Protection Switch Using Stub/Line Selectable Circuits