L-Band SPDT Switch Using Si-MOSFET (Special Issue on Microwave Devices for Mobile Communications)
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概要
- 論文の詳細を見る
A simplified equivalent circuit, which is useful in L-band, of switching MOSFET is presented. The MOSFET model accounts for the relatively low resistivity of Si substrate. By using this circuits, the relationship between the MOSFET equivalent circuit parameters and a series-shunt FET connected SPDT switch characteristics has been revealed. In order to evaluate the relationship mentioned above, enhancement type NMOSFETs and a SPDT switch with the FETs are fabricated. The MOSFET equivalent circuit parameters at L-band were extracted from measured small-signal S-parameters of the FETs. The measured switch characteristics are fairly good agreement with the simulated results which has been accomplished by using the MOSFET model. This good agreements shows the effectiveness of the MOSFET model which is presented here.
- 社団法人電子情報通信学会の論文
- 1996-05-25
著者
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SUEMATSU Noriharu
Kamakura Works, Mitsubishi Electric Corporation
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SUEMATSU Noriharu
Information Technology R&D Center, Mitsubishi Electric Corporation
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Suematsu Noriharu
Kamakura Works Mitsubishi Electric Corporation
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Suematsu Noriharu
Information Technology R & D Center Mitsubishi Electric Corporation
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Suematsu Noriharu
Information Technology R Amp D Center Electro-optics Amp Microwave System Laboratory Mitsubishi Elec
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IYAMA Yoshitada
Kamakura Works, Mitsubishi Electric Corporation
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IYAMA Yoshitada
Information Technology R&D Center, Mitsubishi Electric Corporation
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Iyama Y
Kamakura Works Mitsubishi Electric Corporation
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SHIGEMATSU Tomonori
Information Technology R amp D Center, Electro-Optics amp Microwave System Laboratory, Mitsubishi El
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M0RIWAKI Takao
Kitaitami Works, Mitsubishi Electric Corporation
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IKEDA Tatsuhiko
ULSI Laboratory, Mitsubishi Electric Corporation
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Shigematsu T
Information Technology R Amp D Center Electro-optics Amp Microwave System Laboratory Mitsubishi Elec
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Moriwaki T
Mitsubishi Electric Corp. Itami‐shi Jpn
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Ikeda Tatsuhiko
Ulsi Laboratory Mitsubishi Electric Corporation
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