An Electrostatic-Discharge (ESD) Protection Device with Low Parasitic Capacitance Utilizing a Depletion-Layer-Extended Transistor (DET) for RF CMOS ICs

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概要

• 論文の詳細を見る

• In this paper, an electrostatic-discharge (ESD) protection device for RF complementary metal oxide semiconductor (CMOS) ICs utilizing the Depletion-layer-Extended Transistor (DET) 1 is reported. The DET, which reduces the area component of junction capacitance by about 1/3, realizes an ESD protection device with low parasitic capacitance. With transmission line pulse (TLP) testing, the DET demonstrates about the same or higher ESD robustness than the conventional transistor. The junction capacitance of the proposed device for obtaining a failure current (It2) of 1–1.33 A in TLP testing, corresponding to a Human Body Model (HBM) tolerance of 2 kV, is estimated to be very low, less than 150 fF. The proposed ESD protection device is very promising for the realization of high-performance and highly reliable RF CMOS ICs.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-04-15

著者

• Sugahara Kazuyuki

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• YAMAKAWA Satoshi

  Advanced Technology R&D Center, Mitsubishi Electric Corporation

• NISHIKAWA Kazuyasu

  Advanced Technology R&D Center, Mitsubishi Electric Corporation

• MURAKAMI Takaaki

  Advanced Technology R&D Center, Mitsubishi Electric Corporation

• Suematsu Noriharu

  Information Technology R & D Center Mitsubishi Electric Corporation

• Ohnakado Takahiro

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Tomisawa Jun

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Oomori Tatsuo

  Advanced Technology R&d Center Mitsubishi Electric Corp.

• Furukawa Akihiko

  Advanced Technology R & D Center Mitsubishi Electric Corporation

• Hashizume Yasushi

  Advanced Technology R&d Center

• Oomori Tatsuo

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan

• Furukawa Akihiko

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan

• Sugahara Kazuyuki

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan

• Murakami Takaaki

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan

• Tomisawa Jun

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan

• Hashizume Yasushi

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan

• Nishikawa Kazuyasu

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan

• Yamakawa Satoshi

  Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan

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