Characteristics of Transmission Lines on Silicon-on-Metal and Silicon-on-Quartz
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概要
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In this paper, we describe the effect of silicon substrate thickness on the characteristics of transmission lines fabricated using complementary metal–oxide–semiconductor (CMOS) technology. The $S$-parameters of the transmission lines on silicon-on-metal (SoM) and silicon-on-quartz (SoQ) are measured. The inductance of a microstrip line on SoM decreases as silicon substrate thickness is reduced, while that on SoQ is nearly constant for various substrate thicknesses. This fact is explained by the magnetic energy of the electromagnetic wave stored in the microstrip lines. Moreover, the loss of the microstrip line on SoM decreases as substrate thickness is reduced owing to a decrease in dielectric loss. In contrast, the characteristics of coplanar waveguides on both SoM and SoQ are constant for various substrate thicknesses.
- 2007-09-15
著者
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YAMAKAWA Satoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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NISHIKAWA Kazuyasu
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Shintani Kenji
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Nishikawa Kazuyasu
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Yamakawa Satoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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