Shuttle Activation Annealing of Implanted Al in 4H-SiC
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概要
- 論文の詳細を見る
A shuttle-type annealing process as a new high-temperature activation annealing technique for SiC has been investigated. Wide-range annealing time (1 s to 3 h) and temperature (1300 to 2000 °C) dependences of electrical properties for Al-ion-implanted 4H-SiC are examined using capacitance–voltage ($C$–$V$) and Hall measurement. When the annealing temperature is between 1700 and 1900 °C, the acceptor activation ratio of 80% shows no dependence on the annealing time from 1 s to 30 min, while the Hall measurement reveals that both the hole density and the mobility increase with an increase in the annealing time and/or annealing temperature. This indicates that the activation of Al acceptors is a fast process compared with the implantation-damage annealing-out processes. The surface morphology of rapidly annealed samples is fairly smooth. An appropriate annealing condition should be determined with due consideration of the trade-off between electrical quality, surface morphology, and throughput.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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Oomori Tatsuo
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Hattori Ryo
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Watanabe Tomokatsu
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Imaizumi Masayuki
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Imaizumi Masayuki
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Oomori Tatsuo
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Hattori Ryo
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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Watanabe Tomokatsu
Advanced Technology R&D Center, Mitsubishi Electric Corporation, 8-1-1 Tsukaguchi-Honmachi, Amagasaki, Hyogo 661-8661, Japan
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