4H-SiC Power Metal–Oxide–Semiconductor Field Effect Transistors and Schottky Barrier Diodes of 1.7 kV Rating
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概要
- 論文の詳細を見る
4H-SiC metal–oxide–semiconductor field effect transistors (MOSFETs) and Schottky barrier diodes (SBDs) of 10 A/1.7 kV rating were fabricated and characterized. Suitable design of a drift layer and a junction termination realized stable avalanche breakdown of 1.8 kV. Relatively low on-resistances of 8.3 m$\Omega$ cm2 for the MOSFET and 2.2 m$\Omega$ cm2 for the SBD were successfully recorded. Temperature dependence of the static characteristics of the SBD showed positive temperature coefficient in both the avalanche breakdown voltage and the differential on-resistance. The MOSFET and SBD were assembled into an SiC module. Its dynamic characterization revealed that the switching loss reduction in the SiC module was as much as 86% in comparison with that of the conventional Si counterpart under a moderate switching condition.
- 2009-04-25
著者
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Miura Naruhisa
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Oomori Tatsuo
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Sumitani Hiroaki
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Imaizumi Masayuki
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Imaizumi Masayuki
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Matsuno Yoshinori
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Kuroda Ken-ichi
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Miura Naruhisa
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Yoshida Shohei
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Nakao Yukiyasu
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Watanabe Shoyu
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Yamamoto Hidekazu
Power Semiconductor Device Works, Mitsubishi Electric Corporation, Koshi, Kumamoto 861-1197, Japan
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Watanabe Shoyu
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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Nakao Yukiyasu
Advanced Technology R&D Center, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661-8661, Japan
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