Measurement of Atomic Incorporation Rates and Modeling of Surface Reactions in (Ba,Sr)TiO_3 Films Prepared by a Liquid Source Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2001-05-01
著者
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OOMORI Tatsuo
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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YAMAMUKA Mikio
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Oomori Tatsuo
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Shibano Teruo
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Yamamuka M
Mitsubishi Electric Corp. Hyogo Jpn
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Yamamuka Mikio
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Kawahara T
Semiconductor Leading Edge Technol. Inc. Tsukuba-shi Jpn
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YAMAMURA Mikio
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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KAWAHARA Takaaki
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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TARUTANI Masayoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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HORIKAWA Tsuyoshi
Advanced Technology R&D Center, Mitsubishi Electric Corporation
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Oomori Tatsuo
Advanced Technology R&d Center Mitsubishi Electric Corp.
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Horikawa Tsuyoshi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Tarutani Masayoshi
Advanced Technology R&d Center Mitsubishi Electric Corporation
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Kawahara Takaaki
Advanced Technology R&D Center, Mitsubishi Electric Corporation
関連論文
- Dielectric Properties of (Ba,Sr)TiO_3 Thin Films Deposited by RF Sputtering
- (Ba_<0.75>Sr_<0.25>)TiO_3 Films for 256 Mbit DRAM (Special Issue on Quarter Micron Si Device and Process Technologies)
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- Preparation of (Ba, Sr)TiO_3 Thin Films by Chemical Vapor Deposition Using Liquid Sources
- Step Coverage and Electrical Properties of (Ba, Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition Using TiO(DPM)_2 ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Dielectric Relaxation of (Ba, Sr)TiO_3 Thin Films
- Dielectric Properties of (Ba_xSr_)TiO_3 Thin Films Prepared by RF Sputtering for Dynamic Random Access Memory Application ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Effects of O_2 Gas on Reaction Mechanisms in the Chemical Vapor Deposition of (Ba, Sr)TiO_3 Thin Film
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- Ion-Assisted Crystal Growth by Post Irradiation as Applied to Nitride Formatiorn
- Etching for 0.15-μm-Level Patterns with Low Microloading Effect Using Beam Plasmas Generated by Gas Puff Plasma Sources
- Measurement of Atomic Incorporation Rates and Modeling of Surface Reactions in (Ba,Sr)TiO_3 Films Prepared by a Liquid Source Chemical Vapor Deposition
- Conformal Step Coverage of (Ba,Sr)TiO_3 Films Prepared by Liquid Source CVD Using Ti(t-BuO)_2(DPM)_2
- Conformal Step Coverage of (Ba,Sr)TiO_3 Films Prepared by Liquid Source CVD Using Ti(t-BuO)_2(DPM)_2
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- Monte-Carlo Simulation of Surface Reactions in Plasma-Enhanced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Thin Films
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- Cross-sectional High-Resolution Transmission Electron Microscope Study of Heteroepitaxial Diamond Film Grown on Pt Substrate
- Application of the Focused-Ion-Beam Technique for Preparing the Cross-Sectional Sample of Chemical Vapor Deposition Diamond Thin Film for High-Resolution Transmission Electron Microscope Observation
- 4H-SiC Power Metal–Oxide–Semiconductor Field Effect Transistors and Schottky Barrier Diodes of 1.7 kV Rating
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