A Study on the Behavior of SiO_2 Film Precursors with Trench Deposition Method for SiH_4/O_2 Low Pressure Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-03-15
著者
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MATSUI Yasuji
Central Research Laboratory, Mitsubishi Electric Corp.
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YUUKI Akimasa
Central Research Laboratory, Mitsubishi Electric Corp.
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Yuuki Akimasa
Central Research Laboratory Mitsubishi Electric Corp.
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Kawahara T
Semiconductor Leading Edge Technol. Inc. Tsukuba-shi Jpn
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KAWAHARA Takaaki
Central Research Laboratory, Mitsubishi Electric Corp.
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Matsui Yasuji
Central Research Laboratory Mitsubishi Electric Corp.
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YUUKI Akimasa
Central Research Laboratory, Mitsubishi Electric Corporation
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MATSUI Yasuji
Central Research Laboratory, Mitsubishi Electric Corporation
関連論文
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- Measurement and Calculation of SiH_2 Radical Density in SiH_4 and Si_2H_6 Plasma for the Deposition of Hydrogenated Amorphous Silicon Thin Films
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- Spectroscopic Measurements of the Production and the Transport of CH Radicals in a Methane Plasma Used for the CVD of a-C:H
- On the Reaction Kinetics in a Mercury Photosensitized CVD of a-Si:H Films
- A Numerical Study on Gaseous Reactions in Silane Pyrolysis
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