Effects of Post-Annealing on Dielectric Properties of (Ba, Sr)TiO_3 Thin Films Prepared by Liquid Source Chemical Vapor Deposition(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)

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概要

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• The post-annealing process has been investigated for (Ba, Sr)TiO_3[BST] thin films employed as a capacitor dielectric in 1 Gbit dynamic random access memories (DRAMs).The effects of post-annealing on morphology, crystallinity, and dielectric properties were examined for thin film capacitors with BST prepared on Pt electrodes by liquid source chemical vapor deposition (CVD).The direct annealing of BST capacitors caused a roughening in surface morphology of the upper Pt electrodes and BST films.However, the post-annealing of capacitors with a silicon dioxide passivation layer was found to cause little change in surface morphology of Pt and BST, and also no significant deterioration in leakage current.The improvement in crystallinity of BST films through post-annealing was confirmed at a temperature in the range 700-850℃ by X-ray diffraction (XRD) and transmission electron microscope (TEM).Moreover, the post-annealing experiments for BST films with different compositions showed that the post-annealing greatly increases the dielectric constant of BST films having approximately stoichiometric composition.The leakage and breakdown properties of BST films were also examined, indicating that excess Ti ions result in an increase of the turn-on voltage and the breakdown time.Based on these investigations, the electrical properties of dielectric constant ε 260, equivalent silicon dioxide thickness 1_eq=0.44nm, and leakage current J_L=1×10^-7 A/cm^2 at 1.9 V were successfully obtained for stoichiometric 30-nm-thick BST films post-annealed at 750℃.Hence, it can be concluded that the post-annealing is a promising technique to enhance the applicability of CVD-deposited BST films with conformal coverage to memory cell capacitors of 1 Gbit DRAMs.

• 社団法人電子情報通信学会の論文
• 1998-04-25

著者

• 斧 高一

  京都大学大学院工学研究科

• Ono K

  Department Of Applied Chemistry The University Of Tokyo

• Ono K

  Advanced Technology R&d Center Mitsubishi Electric Corporation:(present Address)department Of Ae

• Ono K

  Univ. California Ca Usa

• KAWAHARA Toshio

  Department of Materials Science and Engineering, National Defense Academy

• Ono K

  The Faculty Of Engineering Ehime University

• Yamamuka M

  Mitsubishi Electric Corp. Hyogo Jpn

• Kawahara T

  Semiconductor Leading Edge Technol. Inc. Tsukuba-shi Jpn

• HORIKAWA Tsuyoshi

  The authors are with the Advanced Technology R&D Center, Mitsubishi Electric Corporation

• TANIMURA Junji

  The authors are with the Advanced Technology R&D Center, Mitsubishi Electric Corporation

• KAWAHARA Takaaki

  The authors are with the Advanced Technology R&D Center, Mitsubishi Electric Corporation

• YAMAMUKA Mikio

  The authors are with the Advanced Technology R&D Center, Mitsubishi Electric Corporation

• TARUTANI Masayoshi

  The authors are with the Advanced Technology R&D Center, Mitsubishi Electric Corporation

• ONO Kouichi

  The authors are with the Advanced Technology R&D Center, Mitsubishi Electric Corporation

• Tanimura Junji

  The Authors Are With The Advanced Technology R&d Center Mitsubishi Electric Corporation

• Horikawa Tsuyoshi

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Tarutani Masayoshi

  Advanced Technology R&d Center Mitsubishi Electric Corporation

• Kawahara T

  Faculty Of Technology Tokyo University Of Agriculture And Technology

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