Horikawa Tsuyoshi | Advanced Technology R&d Center Mitsubishi Electric Corporation

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著作論文

Dielectric Properties of (Ba,Sr)TiO_3 Thin Films Deposited by RF Sputtering
(Ba_<0.75>Sr_<0.25>)TiO_3 Films for 256 Mbit DRAM (Special Issue on Quarter Micron Si Device and Process Technologies)
Dielectric Relaxation of (Ba, Sr)TiO_3 Thin Films
Dielectric Properties of (Ba_xSr_)TiO_3 Thin Films Prepared by RF Sputtering for Dynamic Random Access Memory Application ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
Measurement of Atomic Incorporation Rates and Modeling of Surface Reactions in (Ba,Sr)TiO_3 Films Prepared by a Liquid Source Chemical Vapor Deposition
Conformal Step Coverage of (Ba,Sr)TiO_3 Films Prepared by Liquid Source CVD Using Ti(t-BuO)_2(DPM)_2
Conformal Step Coverage of (Ba,Sr)TiO_3 Films Prepared by Liquid Source CVD Using Ti(t-BuO)_2(DPM)_2
Effects of Post-Annealing on Dielectric Properties of (Ba, Sr)TiO_3 Thin Films Prepared by Liquid Source Chemical Vapor Deposition(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)
Mechanisms of X-Ray Radiation-Induced Damage in (Ba, Sr)TiO_3 Capacitors
Influence of Buffer Layers and Barrier Metals on Properties of (Ba, Sr)TiO_3 Films Prepared by Liquid Source Chemical Vapor Deposition
Mechanisms of Synchrotron X-Ray Irradiation-Induced Damage in (Ba, Sr)TiO_3 Capacitors
A Mass Spectrometric Study of Reaction Mechanisms in Chemical Vapor Deposition of (Ba, Sr)TiO_3 Films

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