Oomori Tatsuo | Advanced Technology R&d Center Mitsubishi Electric Corp.

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著作論文

In Situ Fourier Transform Infrared Measurements of Si Surface and Bulk Plasmas in Cl_2/O_2 and HBr/O_2 Electron Cyclotron Resonance Plasma Etching: Influence of Oxygen on Reaction Products
Etching for 0.15-μm-Level Patterns with Low Microloading Effect Using Beam Plasmas Generated by Gas Puff Plasma Sources
Measurement of Atomic Incorporation Rates and Modeling of Surface Reactions in (Ba,Sr)TiO_3 Films Prepared by a Liquid Source Chemical Vapor Deposition
Shuttle Activation Annealing of Implanted Al in 4H-SiC
4H-SiC Power Metal–Oxide–Semiconductor Field Effect Transistors and Schottky Barrier Diodes of 1.7 kV Rating
Shuttle Activation Annealing of Implanted Al in 4H-SiC
An Electrostatic-Discharge (ESD) Protection Device with Low Parasitic Capacitance Utilizing a Depletion-Layer-Extended Transistor (DET) for RF CMOS ICs

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