Ono K | Univ. Tsukuba Ibaraki Jpn

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著作論文

Highly Uniform Si-Doped GaAs Epitaxial Layers Grown by MBE Using a TEG, Arsenic, and Silicon System
Substrate Temperature Dependence of Carbon Incorporation into GaAs Grown by MBE Using Triethylgallium and As_4
Highly Uniform, High-Purity GaAs Epitaxial Layer Grown by MBE Using Triethylgallium and Arsenic : Semiconductors and Semiconductor Devices
Fracture-Mode Classification in Glass-Fiber Composites by Acoustic Emission Source Wave Characterization and Autoregressive Coefficients
In Situ Fourier Transform Infrared Measurements of Si Surface and Bulk Plasmas in Cl_2/O_2 and HBr/O_2 Electron Cyclotron Resonance Plasma Etching: Influence of Oxygen on Reaction Products
In situ Monitoring of Product Species in Plasma Etching by Fourier Transform Infrared Absorption Spectroscopy
Anisotropic Etching of n^+-Polysilicon Using Beam Plasmas Generated by Gas Puff Plasma Sources
Chemical Kinetics of Chlorine in Electron Cyclotron Resonance Plasma Etching of Si ( Plasma Processing)
Multicusp Electron-Cyclotron-Resonance Plasma Source Working with Microwaves Radially Injected through an Annular Slit
THE FRACTURE BEHAVIOR OF A MODEL FIBER REINFORCED PLASTIC COMPOSITE UTILIZING A dISPLACEMENT-SENSITIVE AE MONITORING SYSTEM
Power-Dependent Coupling Characteristics of a Butt Joint between a Single-Mode Planar Waveguide and a Nonlinear Planar Waveguide with Different Film Thickness
Measurement of the Cl Atom Concentration in RF Chlorine Plasmas by Two-Photon Laser-Induced Fluorescence
Plasma Chemical View of Magnetron and Reactive Ion Etching of Si with Cl_2 : Etching and Deposition Technology
Plasma Chemical View of Magnetron and Reactive Ion Etching of Si with Cl_2

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