Ishikawa T | Riken Harima Institute
スポンサーリンク
概要
関連著者
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Ishikawa T
Riken Harima Institute
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Ishikawa T
National Space Dev. Agency Of Japan Ibaraki Jpn
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Ishikawa T
Kyushu Univ. Fukuoka Jpn
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Kawado Seiji
Environment & Analysis Technology Department Technical Support Center Sony Corporation
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Kikuta Seishi
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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KIKUTA Seishi
Department of Applied Physics, Faculty of Engineering, University of Tokyo
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Kawasaki S
Lnstitute For Chemical Research Kyoto University
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Hiyamizu Satoshi
Fujitsu Limited
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Hiyamizu Satoshi
Fujitsu Laboratories Limited
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MUTO Shunichi
Fujitsu Laboratories Ltd.
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INATA Tsuguo
Fujitsu Laboratories Ltd.
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HIYAMIZU Satoshi
Graduate School of Engineering Science, Osaka University
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Muto S
Kek Ibaraki
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ISHIKAWA Tomonori
Fujitsu Laboratories LTD.
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Kikuta Seishi
Institute For Solid State Physics University Of Tokyo
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Ishikawa Tetsuya
Department of Cardiology, Saitama Cardiovascular Respiratory Center
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TANAKA Nobuyuki
The Kochi Prefectural Makino Botanical Garden
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Kitao Shinji
Research Reactor Institute Kyoto University
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Saito J
Extreme Ultraviolet Lithography System Dev. Assoc. (euva) Kanagawa Jpn
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Saito Junji
Fujitsu Laboratories Limited
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Saito Junji
Fujitsu Laboratories Ltd.
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Saito J
New Business Development Department Nikon Corporation In Hitachi Maxell
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Saito Jun
Nikon Corp. New Business Development Department
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NAKATA Yoshiaki
Fujitsu Laboratories Ltd.
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Nakata Y
Fujitsu Ltd. Atsugi Jpn
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ISHIKAWA Tetsuya
Photon Factory, National Laboratory for High Energy Physics
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IZUMI Koichi
Department of Applied Physics, Faculty of Engineering, University of Tokyo
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Nishikawa Y
Toshiba Corp. Kawasaki Jpn
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Nishikawa Y
Materials And Devices Research Laboratories Toshiba Corporation
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Tanaka N
Nagoya Univ. Nagoya Jpn
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NANBU Kazuo
Fujitsu Laboratories Ltd.
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Nanbu Kazuo
Fujitsu Laboratories Limited
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FUJII Toshio
Fujitsu Laboratories Ltd.
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Komeya Katutoshi
Graduate School Of Environment And Information Science Yokohama National University
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Lo´pez M
Optoelectronics Technology Research Laboratory
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Zhang Xiaowei
Photon Factory (pf) Institute Of Materials Structure Science High Energy Accelerator Research Organi
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TACKEUCHI Atsushi
Fujitsu Laboratories Ltd.
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ZHANG Xiao
National Laboratory for High Energy Physics
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YODA Yoshitaka
CREST, Japan Science and Technology Agency
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SUGIYAMA Yoshihiro
Fujitsu Limited
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Sugiyama Y
Fujitsu Laboratories Ltd.
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Ando Masami
National Laboratory for High Energy Accelerator Research Organization
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ANDO MASAMI
Photon Factory, National Laboratory for High Energy Physics
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YODA Yoshitaka
Department of Applied Physics, Faculty of Engineering, University of Tokyo
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ISHIKAWA Tetsuya
Faculty of Engineering, The University of Tokyo
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Kitano T
Tokyo Electron Kyushu Ltd. Kumamoto Jpn
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Yoda Y
Crest Japan Science And Technology Agency:japan Synchrotron Radiation Research Institute
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Yoda Y
Crest Japan Science And Technology Agency
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Yoda Yoshitaka
Japan Synchrotron Radiation Reserch Institute Sayou-gun
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Yoda Yoshitaka
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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ZHANG Xianmin
Department of Information and Electronic Engineering, Zhejiang University
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SASA Shigehiko
Fujitsu Laboratories Ltd.
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Matsui Junji
Fundamental Research Laboratories, NEC Corporation
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水木 純一郎
原子力機構
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兵藤 一行
筑波大学 放射線
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Kojima S
Univ. Tsukuba Ibaraki Jpn
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Mitsui T
Crest Japan Science And Technology Agency:japan Atomic Energy Agency
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KONDO Kazuo
Fujitsu Laboratories Ltd.
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ZHANG Xiao
Photon Factory, Laboratory for High Energy Physics
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平野 克己
High Energy Accelerator Res.organization Ibaraki Jpn
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Ando Masami
Photon Factory National Laboratory For High Energy Physics (kek)
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Kawado Seiji
Sony Corporation Research Center
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Kudo Y
Environment & Analysis Technology Department Technical Support Center Sony Corporation
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AKIMOTO Katsuhiro
Institute of Applied Physics, University of Tsukuba
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KOJIMA Shigeru
Sony Corporation Research Center
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KITANO Tomohisa
Fundamental Research Laboratories, NEC Corporation
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YOKOYAMA Naoki
Fujitsu Laboratories Ltd.
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MATSUSHITA Tadashi
Photon Factory, National Laboratory for High Energy Physics (KEK)
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Hirano Keiichi
Department of Applied Physics, Faculty of Engineering, University of Tokyo
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Liu Kuang-yu
Environment & Analysis Technology Department Technical Support Center Sony Corporation
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KONDO Kazuhiro
Fujitsu Limited
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KUDO Yoshihiro
Sony Corporation Research Center
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Akimoto Koichi
Department of Applied Physics, Faculty of Engineering, University of Tokyo
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Takahashi Toshio
Department of Applied Physics, Faculty of Engineering, University of Tokyo
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Yokoyama Naoki
Department of Pediatrics, Kobe University Graduate School of Medicine
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Kondo Kazuhiro
Fujitsu Laboratories Ltd.
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MARUYAMA Hiroshi
Department of Pathology, Hoshigaoka Koseinenkin Hospital
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ISHIKAWA Tetsuya
RIKEN SPring-8 Center, Harima Institute
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TAKEI Humihiko
Oxide Corporation
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Hashimoto Hisao
Fujitsu Limited
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Muto Shigeki
Department Of Physics School Of Science Tokai University
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SHIBATOMI Akihiro
Fujitsu Limited
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MITSUI Takaya
Department of Applied Physics, Faculty of Engineering, University of Tokyo
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SUGIYAMA Hiroshi
Photon Factory, National Laboratory for High Energy Physics
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SUZUKI Carlos
JAERI-RIKEN SPring-8 Project Team
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TAKEI Humihiko
Institute for Solid State Physics, The University of Tokyo
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KUDO Yoshihiro
Department of Applied Physics, Faculty of Engineering, The University of Tokyo
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OHNO Hideo
JAERI-RIKEN SPring-8 Project Team
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KAWAMURA Tomoaki
NTT Interdisciplinary Research Laboratories
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OSHIMA Masaharu
NTT Interdisciplinary Research Laboratories
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FUKUDA Yukio
NTT Optoelectronics Laboratories
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OHMACHI Yoshiro
NTT Optoelectronics Laboratories
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IZUMI Koichi
Faculty of Engineering, The University of Tokyo
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KIKUTA Seishi
Faculty of Engineering, The University of Tokyo
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SNIGIREV Anatoly
Institute of Microelectronics Technology and High Purity Materials, Russsian Academy of Sciences
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Ohno H
Jaeri-riken Spring-8 Project Team
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Ohno Hideo
Molten Material Laboratory Division Of Nuclear Fuel Research Japan Atomic Energy Research Institute
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Ohno Hideo
Laboratory For Electronic Intelligent Systems
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武藤 真三
山梨大学
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Imai M
Univ. Osaka Prefecture Sakai
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Fukuda Yukio
Texas Instruments Tukuba Research & Development Center Limited
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Fukuda Y
Ntt Optoelectronics Laboratories
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Fukuda Yukio
Tsukuba Research And Development Center Texas Instruments Japan Limited
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Ohmachi Y
Ntt Optoelectronics Laboratories
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Iga K
Microsystem Research Center P & I Lab . Tokyo Institute Of Technology
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Sugiyama H
Institute Of Materials Structure Science High Energy Accelerator Research Organization Kek
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LIU Kuang
Sony Corporation Research Center
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IGA Kenichi
Tokyo Institute of Technology, Nagatsuta Campus, Research Laboratory of Precision Machinery and Elec
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Hattori T
Department Of Applied Physics Tokyo University Of Science
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Takei H
Tohoku Univ. Sendai Jpn
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Takei H
Osaka Univ. Toyonaka
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Takei Humihiko
Institute For Iron Steel And Other Metals Tohoku University
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Kawamura N
Japan Synchrotron Radiation Research Institute
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Kawamura Naomi
Japan Synchrotron Radiation Research Institute
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Oshima M
Department Of Applied Chemistry The University Of Tokyo
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ISHIKAWA Takatoshi
Department of Experimental Pathology, Cancer Institute
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圓山 裕
広大院理
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鈴木 勝
電気通信大学
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円山 裕
岡山大理
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SETO Makoto
Research Reactor Institute, Kyoto University
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平野 克己
群馬大学工学部
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USUKI Tatsuya
Fujitsu Laboratories Ltd.
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平野 克己
群馬大工
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兵藤 一行
高エネルギー加速器研究機構物質構造科学研究所
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兵藤 一行
高エネルギー加速器研究機構 物質構造科学研究所 放射光科学研究施設
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MIZUMAKI Masaichiro
Japan Synchrotron Radiation Research Institute
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円山 裕
岡山大 理
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兵藤 一行
高エネルギー加速器研究機構
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Hyodo K
High Energy Accelerator Res. Organization
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Sugiyama Hiroshi
Department of Chemistry, Graduate School of Science Kyoto University
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Wada Osamu
Materials & Electronic Device Laboratory Mitsubishi Electric Corporation
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Basov Yuri
Institute Of Microelectronics Technology And High Purity Materials Russsian Academy Of Sciences
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WADA Osamu
Fujitsu Laboratories Ltd.
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Usuki Tatsuya
Department Of Applied Physics Osaka University
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Usuki Tatsuya
Fujitsu Lab. Ltd. Atsugi Jpn
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Wada Osamu
FESTA Laboratories
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SUZUKI Motohiro
JASRI/SPring-8
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Inoue Masataka
Department of Operative Dentistry, Osaka Dental University
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円山 裕
広大院理
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HYODO Kazuyuki
Photon Factory, National Laboratory for High Energy Physics
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Okamoto Naoko
Institute For Solid State Physics University Of Tokyo
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TAKAHASHI Toshio
Institute for Solid State Physics, University of Tokyo
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NAKATANI Shinichiro
Institute for Solid State Physics, University of Tokyo
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ONO Katsuji
Fujitsu Laboratories Ltd.
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NAKAMURA Tomohiro
Fujitsu Limited
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Hyodo Kazuyuki
Institute Of Material Structure Sciences High Energy Accelerator Research Organization
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Wada O
The Department Of Electrical And Electronics Engineering Kobe University
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Wada Osamu
Fujitsu Laboratories Limited
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Wada Osamu
Fujitsu Laboratories
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ZHANG Xiao-Wei
Photon Factory, National Laboratory for High Energy Physics
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HASEGAWA Yuji
Department of Applied Physics, University of Tokyo
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SAKAI Fumiko
Institute for Solid State Physics, The University of Tokyo
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HARAMI Taikan
JAERI-RIKEN SPring-8 Project Team
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TAKENAKA Hisataka
NTT Interdisciplinary Research Laboratories
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UETA Makoto
NTT Optoelectronics Laboratories
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ARISTOV Vitali
Institute of Microelectronics Technology and High Purity Materials, Russsian Academy of Sciences
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GOUREEV Timour
Institute of Microelectronics Technology and High Purity Materials, Russsian Academy of Sciences
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SNIGIREV A.
Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences
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SUVOROV A.
Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences
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WEI Zhang
Photon Factory, National Laboratory for High Energy Physics
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NAKAYAMA Kan
National Research Laboratory of Metrology
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KISHIMOTO Shunji
Photon Factory, National Laboratory for High Energy Physics
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Annaka Shoichi
Tokyo University of Mercantile Marine
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MAKSIMENKO Anton
Photon Factory, IMSS, KEK
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HASHIMOTO Eiko
Department of Photo-Science, GUAS
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SHIMAO Daisuke
Department of Material Structure Science, GUAS
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NAKAMURA Ikuo
Department of Mechanical Engineering, Nagoya University
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Ono K
Department Of Applied Chemistry The University Of Tokyo
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Wada O
The Femtosecond Technology Research Association:the Kobe University.
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Ono K
Univ. California Ca Usa
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Seto Makoto
Research Reactor Institute Kyoto University
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Ono K
Univ. Tsukuba Ibaraki Jpn
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Inoue Masataka
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Nishikawa Yukie
Corporate Research & Development Center Toshiba Corporation
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Nishino Yoshinori
Riken Hyogo Jpn
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LOPEZ Maximo
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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Maksimenko Anton
Photon Factory Imss Kek
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SUZUKI Yoshifumi
Department of Internal Medicine, Social Insurance Chuo General Hospital
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TAMURA Masao
Optoelectronics Technology Research Laboratory
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Nishi Hidetoshi
Fujitsu Limited
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HARAMI Taikan
Japan Atomic Energy Research Institute
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Ando Masami
Department of Photon-Science, School of Advanced Studies, Graduate University for Advanced Studies (
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LIU Kuang-Yu
Sony Corporation Research Center
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KOREEDA Satoshi
Department of Applied Physics, Faculty of Engineering, University of Tokyo
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FUCHIGAMI Katsuhiro
Department of Applied Physics, Faculty of Engineering, University of Tokyo
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KANZAKI Kiyoshi
Department of Applied Physics, Faculty of Engineering, University of Tokyo
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TAKAHASHI Toshio
The Institute for Solid State Physics, The University of Tokyo
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Takayama Isamu
Department of Applied Physics, Faculty of Engineering, University of Tokyo
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Ohta Toshiaki
Photon Factory, National Laboratory for High Energy Physics
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Moriyama H
Department Of Chemistry Faculty Of Science Toho University
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Hyodo Kazuyuki
Photon Factory National Laboratory For High Energy Physics
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Goto Shunji
Japan Synchrotron Radiation Research Institute
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圓山 裕
Department Of Physical Science Graduate School Of Science Hiroshima University
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Suzuki Michiro
Department Of Physics Tohoku University
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Sugiyama Hiroshi
Institute of Materials Structure Science, High Energy Accelerator Research Organization, KEK
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平野 克巳
群馬大学工学部
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鈴木 勝
電通大先進理工
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円山 裕
広島大 大学院
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MIMURA Takashi
Fujitsu Laboratories Lid.
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SUZUKI Motohiro
Harima Institute, Tne Institute of Physical and Chemical Research(RIKEN)
著作論文
- InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
- Study on the Si(111) √×√ - Ag Surface Structure by X-Ray Diffraction : Surfaces, Interfaces and Films
- Highly Uniform, High-Purity GaAs Epitaxial Layer Grown by MBE Using Triethylgallium and Arsenic : Semiconductors and Semiconductor Devices
- GaAs Surface Cleaning with HCl Gas and Hydrogen Mixture for Molecular-Beam-Epitaxial Growth : Semiconductors and Semiconductor Devices
- Effect of Thermal Etching on GaAs Substrate in Molecular Beam Epitaxy
- Interference of Nuclear Bragg Scattered X-Rays in X-Ray Interferometer with Large Optical Path Difference
- Time Domain Interferometry in X-Ray Region Using Nuclear Resonant Scattering
- Time-Delayed Interferometry with Nuclear Resonant Scattering of Synchrotron Radiation
- Flux Growth and Characterization of α-^Fe_2O_3 Single Crystals for Nuclear Bragg Scattering Optical Components
- X-Ray Standing Wave Analysis of GaAs/Si Interface
- Focusing Properties of a Linear-Phase Bragg-Fresnel Lens
- A Plane Wave Diffraction on an Amplitude-Phase Laue Microinterferometer
- X-Ray Standing Wave Analysis of Al/GaAs/Si(111)
- High-Resolution Measurements of Nuclear Bragg Scattering from a Synthetic α-^Fe_2O_3 Crystal
- An X-Ray Phase Plate Using Bragg-Case Diffraction
- First Application of X-ray Refraction-based Computed Tomography to a Biomedical Object(Physiology)
- Measurement of Local Lattice Distortion in Silicon by Imaging-Plate Plane-Wave X-Ray Topography with Image Magnification
- Time-Resolved X-Ray Diffraction Measurement of Silicon Surface during Laser Irradiation under Grazing-Incidence Conditions
- Novel Analysis System of Imaging-Plate Plane-Wave X-Ray Topography for Characterizing Lattice Distortion in Silicon
- Switching of Photon Helicities in the Hard X-Ray Region with a Perfect Crystal Phase Retarder
- Time-Resolved X-Ray Diffraction from a Silicon Crystal Irradiated by a Q-Switched Nd:YAG Laser : Condensed Matter
- X-Ray Standing Wave Method Applied to the Characterization of InGaAsP Alloy Semiconductor Thin Film
- Observation of X-Ray Diffraction Spots from the (√×√)R30°Bi Structure on the Si(111) Surface under the Condition of Large Incidence Angle
- Structure Analysis of the NiSi_2/(111)Si Interface by the X-Ray Standing Wave Method
- Effect of H_2 on the Quality of Si-Doped Al_xGa_As Grown by MBE
- The Effect of Annealing on the Electrical Properties of Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE
- Electronic States in Selectively Si-Doped N-AlGaAs/GaAs/N-AlGaAs Single Quantum Well Structures Grown by MBE
- Improved 2DEG Mobility in Inverted GaAs/n-AlGaAs Heterostructures Grown by MBE
- Implantation into an AlGaAs/GaAs Heterostructure : B-6: III-V DEVICE TECHNOLOGY
- Dependence of the Mobility and the Concentration of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-Al_xGa_As Heterostructure on the AlAs Mole Fraction
- Electrical Properties of Si-Doped Al_xGa_As Layers Grown by MBE
- Study of 4p Electronic States Related to Magnetic Phase Transition in Mn_3MC (M=Zn and Ga) by X-ray Magnetic Circular Dichroism(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Influence of MBE Growth Conditions on Persistent Photoconductivily Effects in N-AlGaAs and Selectively Doped GaAs/AlGaAs Heterostructures
- Near-1.3-μm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
- Fast Recovery from Excitonic Absorption Bleaching in Type-II : GaAs/AlGaAs/AlAs Tunneling Biquantum Well
- Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
- Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
- Transmission-Type X-Ray Phase Retarder Using Ge Crystal in Laue Diffraction Geometry
- Synchrotron Plane Wave X-Ray Topography of 6 inch Diameter Si Crystal
- Generation Rule of the Slip Dislocation in LEC GaAs Crystal
- The Effect of Reduction of Dislocation Density on the Lattice Distortions in Undoped GaAs Single Crystal Grown by LEC Method
- Synchrotron Plane Wave X-Ray Topography of GaAs with a Separate (+, +) Monochro-Collimator
- X-Ray Topography Examination of Lattice Distortions in LEC-Grown GaAs Single Crystals
- Structural Analysis of the NiSi_2/(111)Si Interface by the X-Ray Standing-Wave Method
- Selectively Doped GaAs/ N-Al_Ga_As Heterostructures Grown by Gas-Source MBE : Semiconductors and Semiconductor Devices
- Effects of GaAs-Surface Roughness on the Electron-Beam Patterning Characteristics of a Surface-Oxide Layer
- In Situ Fabrication of Buried GaAs/AlGaAs Quantum-Well Mesa-Stripe Structures with Improved Regrown Interfaces
- In situ Electron-beam Processing for GaAs/AlGaAs Nano-structures
- Improvement in Patterning Characteristics of GaAs Oxide Mask Used in In Situ Electron-Beam Lithography
- In Situ GaAs Patterning and Subsequent Molecular-Beam Epitaxial Regrowth of AlGaAs/GaAs Wire Structures
- Electron Beam Patterning Mechanism of GaAs Oxide Mask Layers Used in In Situ Electron Beam Lithography
- Cathodoluminescence of Wirelike GaAs/AlAs Quantum Well Structures Grown on Substrates Patterned with [001] Mesa Stripes
- Characterization of In Situ Cl_2-Etched GaAs Buffer Layers and Regrown GaAs/AlGaAs Quantum Welts
- Helicity-Modulation Technique Using Diffractive Phase Retarder for Measurements of X-ray Magnetic Circular Dichroism
- Laue-Case Plane Wave Topography Using Synchrotron Radiation to Reveal Microdefects in a Thinned Silicon Crystal
- Observation of Microdefects in Thin Silicon Crystals by Means of Plane-Wave Topography Using Synchrotron X-Radiation
- Improved Theory for Carrier Leakage and Diffusion in Multiquantum-well Semiconductor Lasers
- Strained Layer Multiquantum Barriers with Improved Carrier Injection and Confinement
- A Pseudomorphic In_Ga_As/AlAs Resonant Tunneling Barrier with a Peak-to-Valley Current Ratio of 14 at Room Temperature
- A New Heterostructure for 2DEG System with a Si Atomic-Planar-Doped AlAs-GaAs-AlAs Quantum Well Structure Grown by MBE
- Sub-100 nm Patterning of GaAs Using In Situ Electrom Beam Lithography
- Photoluminescence Study of Electron-Beam-Induced Damage in GaAs/AlGaAs Quantum-Well Structures
- Role of an Electron Beam in the Modification of a GaAs Oxide Mask for in situ EB Lithography
- Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
- Effect of Silicon Doping Profile on I-V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBE
- Time Evolution of Excitonic Absorption Bleaching of Resonant Tunneling Bi-Quantum-Well Structures
- Negative Differential Resistance of Strain-Free InGaAs/AlAsSb Resonant Tunneling Barrier Structures Lattice-Matched to InP
- Fast Recovery of Excitonic Absorption Peaks in Tunneling Bi-Quantum-Well Structures
- Picosecond Characterization of InGaAs/InAlAs Resonant Tunneling Barrier Diode by Electro-Optic Sampling
- Raman Spectrum of Selenium Dissolved in an Aqueous Solution of Sodium Sulfide
- Raman Spectra of Rhombohedral and α-Monoclinic Selenium under High Hydrostatic Pressure