SUGIYAMA Yoshihiro | Fujitsu Limited

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概要

• 同名の論文著者
• Fujitsu Limitedの論文著者

関連著者

• SUGIYAMA Yoshihiro

  Fujitsu Limited

• Sugiyama Yoshihiro

  Fujitsu Laboratories Ltd.

• Sugiyama Y

  Fujitsu Laboratories Ltd.

• Sugiyama Yoshinobu

  Fujitsu Laboratories Ltd.

• NAKATA Yoshiaki

  Fujitsu Laboratories Ltd.

• Nakata Yoshiaki

  Fujitsu Laboratories Limited

• Nakata Y

  Fujitsu Ltd. Atsugi Jpn

• Nishikawa Y

  Toshiba Corp. Kawasaki Jpn

• Nishikawa Y

  Materials And Devices Research Laboratories Toshiba Corporation

• YOKOYAMA Naoki

  Fujitsu Laboratories Ltd.

• Muto S

  Kek Ibaraki

• Yokoyama N

  Fujitsu Laboratories Ltd.

• Yokoyama Naoki

  Department of Pediatrics, Kobe University Graduate School of Medicine

• Yokoyama Naoki

  Institute For Nano Quantum Information Electronics The University Of Tokyo

• Muto Shigeki

  Department Of Physics School Of Science Tokai University

• MUTO Shunichi

  Fujitsu Laboratories Ltd.

• Nishikawa Yukie

  Corporate Research & Development Center Toshiba Corporation

• 武藤 真三

  山梨大学

• INATA Tsuguo

  Fujitsu Laboratories Ltd.

• TACKEUCHI Atsushi

  Fujitsu Laboratories Ltd.

• Ishikawa T

  Riken Harima Institute

• HIYAMIZU Satoshi

  Graduate School of Engineering Science, Osaka University

• Hiyamizu Satoshi

  Fujitsu Limited

• Hiyamizu Satoshi

  Fujitsu Laboratories Limited

• Segawa Yusaburo

  Photodynamics Research Center Riken (institute Of Physical And Chemical Research)

• Tackeuchi A

  Department Of Applied Physics Waseda University

• FUJII Toshio

  Fujitsu Laboratories Ltd.

• Nishikawa Yukie

  Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation

• Fujii Toshio

  Fujitsu Laboratories Lid.

• Nakata Y

  Fujitsu Laboratories Ltd.

• AWANO Yuji

  Fujitsu Ltd.

• IMAMURA Kenichi

  Fujitsu Laboratories Ltd.

• Imamura K

  Fujitsu Lab. Ltd. Kanagawa Jpn

• Awano Yuji

  Fujitsu Lab. Ltd. Kanagawa Jpn

• Awano Y

  Fujitsu Ltd. Atsugi Jpn

• Awano Yuji

  Fujitsu Laboratories Ltd.

• Nakata Yoshinori

  Microgravity Materials Science Group Institute For Materials And Chemical Process National Institute

• Imamura Kimitake

  Faculty Of Engineering Yokohama National University

• Ishikawa Takatoshi

  Department Of Applied Physics Faculty Of Science Fukuoka University

• USUKI Tatsuya

  Fujitsu Laboratories Ltd.

• Wada Osamu

  Materials & Electronic Device Laboratory Mitsubishi Electric Corporation

• Sugawara Mitsuru

  Fujitsu Limited And Fujitsu Laboratories Limited

• Sugawara Mitsuru

  北海道大学 薬学研究臨床薬剤学

• MUTO Shunichi

  Faculty of Engineering, Hokkaido University

• WADA Osamu

  Fujitsu Laboratories Ltd.

• Usuki Tatsuya

  Department Of Applied Physics Osaka University

• Usuki Tatsuya

  Fujitsu Lab. Ltd. Atsugi Jpn

• Wada Osamu

  FESTA Laboratories

• SAKUMA Yoshiki

  Fujitsu limited

• Sugiyama Y

  Jst‐crest Ibaraki Jpn

• Wada O

  The Department Of Electrical And Electronics Engineering Kobe University

• Wada Osamu

  Fujitsu Laboratories Limited

• Wada Osamu

  Fujitsu Laboratories

• Wada O

  The Femtosecond Technology Research Association:the Kobe University.

• Ishikawa T

  Kyushu Univ. Fukuoka Jpn

• SASA Shigehiko

  Fujitsu Laboratories Ltd.

• Sugawara Mitsuru

  Fujitsu Laboratories Ltd.

• Sugawara M

  Fujitsu Laboratories Ltd.

• Ishikawa Tetsuya

  Riken Harima Institute

• Sakuma Yoshiki

  Fujitsu Laboratories Ltd.

• Wada Osamu

  The Femtosecond Technology Research Association:the Kobe University.

• Sasa S

  Fujitsu Laboratories Ltd.

• AOKI Masaki

  FUJITSU LABORATORIES LTD.

• Sasa Shigehiko

  Nanomaterials Microdevices Research Center Osaka Institute Of Technology

• Usuki T

  Fujitsu Lab. Ltd. Atsugi Jpn

• Sugawara M

  Semiconductor Company Sony Corporation

• Sugawara M

  Fujitsu Limited And Fujitsu Laboratories Limited

• Sugawara Mitsuru

  Fujitsu and Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

• TAKATSU Motomu

  Fujitsu Laboratories Ltd.

• 武藤 真三

  山梨大学工学部

• FUTATSUGI Toshiro

  Fujitsu Laboratories Ltd.

• MUTO Shunichi

  Department of Applied Physics, Hokkaido University

• ISHIKAWA Hiroshi

  Fujitsu Laboratories Ltd.

• MUKAI Kohki

  Fujitsu Laboratories Ltd.

• YAMAGUCHI Masaomi

  Fujitsu Limited

• OHSHIMA Toshio

  Fujitsu Laboratories Ltd.

• SASAKURA Hirotaka

  Department of Applied Physics, Faculty of Engineering Hokkaido University

• MUKAI Kohki

  Optical Semiconductor Devices Labs, Fujitsu Laboratories Ltd.

• ENDOH Akira

  Fujitsu Laboratories Ltd.

• SHOJI Hajime

  Fujitsu Laboratories Ltd.

• NISHIKAWA Yuji

  Fujitsu Laboratories Ltd.

• Yamaguchi Masaomi

  Fujitsu Lab. Ltd. Kanagawa Jpn

• Sasakura Hirotaka

  Department Of Applied Physics Faculty Of Engineering Hokkaido University

• SEKIGUCHI Takashi

  Institute for Materials Research, Tohoku University

• MUTO Shunichi

  the Faculty of Engineering, Hokkaido University

• OHSHIMA Takeshi

  Japan Atomic Energy Research Institute

• Mukai K

  Univ. Tokyo Chiba Jpn

• Iizuka Takashi

  Fujitsu Laboratories Ltd.:aset Super-fine Sr Lithography Laboratory

• KONDO Kazuhiro

  Fujitsu Limited

• Komeya Katutoshi

  Graduate School Of Environment And Information Science Yokohama National University

• Ishikawa T

  National Space Dev. Agency Of Japan Ibaraki Jpn

• Kondo Kazuhiro

  Fujitsu Laboratories Ltd.

• Kondo K

  Fujitsu Laboratories Ltd.

• ISHIKAWA Hideaki

  Fujitsu Laboratories Ltd.

• Ohnishi Hiroaki

  Fujitsu Laboratories Ltd.

• TANAKA Hitoshi

  Fujitsu Laboratories Ltd.

• NAKAMURA Satoshi

  Fujitsu Laboratories Ltd.

• Ishikawa T

  Fujitsu Laboratories Ltd.

• Sekiguchi Takashi

  Department Of Physics Faculty Of Science Tohoku University:the Research Institute For Iron Steel And

• YOSHIDA Chikako

  Fujitsu Laboratories Ltd.

• NOSHIRO Hideyuki

  FUJITSU LABORATORIES LTD.

• YAMAZAKI Yuichi

  FUJITSU LABORATORIES LTD.

• KINOSHITA Kenntaro

  FUJITSU LABORATORIES LTD.

• Ohnishi H

  Taihei Kogyo Co. Ltd. Himeji Jpn

• Aoki Masaki

  Embedded Memories Development Department Fujitsu Laboratories Ltd.

• Ohshima T

  Oki Electric Ind. Co. Ltd. Tokyo Jpn

• Sekiguchi T

  Institute For Materials Research Tohoku Unviersity

• Ohnishi Hiroaki

  Division Of Hematology Faculty Of Medicine Kagawa University

• Futatsugi T

  Fujitsu Laboratories Ltd.

• Sekiguchi Takashi

  Nanomaterials Laboratory National Institute For Materials Science (nims)

• Sekiguchi Takashi

  Department Of Chemistry And Materials Technology Kyoto Institute Of Technology

• Sekiguchi Takashi

  Nanomaterials Laboratory National Institute For Materials Science

• Kinoshita Kentaro

  Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

• Tamura Tetsuro

  Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

• Ishikawa H

  Fukuyama Univ. Hiroshima Jpn

• Muto Shinzo

  Department Of Electrical Engineering And Computer Science Faculty Of Engineering Yamanashi Universit

• Iizuka Takashi

  Fujitsu Laboratories Ltd.

• Sekiguchi Takashi

  Advanced Nano-characterization Center National Institute For Materials Science

• Sekiguchi Takashi

  Institute For Materials Research Tohoku University

• 武藤 俊介

  名古屋大学

• Ishikawa Hiroshi

  Fujitsu Laboratories Limited

• KINOSHITA Kentaro

  Fujitsu Laboratories Ltd.

• Nakamura Satoshi

  Fujitsu Laboratories Limited

• TAMURA Tetsuro

  Fujitsu Laboratories Ltd.

• Muto Shunichi

  Department of Applied Physics, Hokkaido Univercity, Sapporo 060-8628, Japan

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著作論文

• InAs Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well
• Effect of Size Fluctuations on the Photoluminescence Spectral Linewidth of Closely Stacked InAs Self-Assembled Quantum Dot Structures
• Narrow Photoluminescemce Line Width of Closely Stacked InAs Self-Assembled Quantum Dot Structures
• Self-Formed InGaAs Quantum Dot Lasers with Multi-Stacked Dot Layer
• New Optical Memory Structure Using Self-Assembled InAs Quantum Dots
• Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots
• Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
• InAs/GaAs Multi-Coupled Quantum Dots Structure Enabling High-Intensity, Near-1.3-μm Emission due to Cascade Carrier Tunneling
• InGaAs/GaAs Tetrahedral-Shaped Recess Quantum Dot (TSR-QD)Technology (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
• Stacked InAs Self-Assembled Quantum Dots on (001) GaAs Grown by Molecular Beam Epitaxy
• Novel InGaAs/GaAs Quantum Dot Structures Formed in Tetrahedral-Shaped Recesses on (111) B GaAs Substrate Using Metalorganic Vapor Phase Epitaxy
• Near-1.3-μm High-Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-Coupled Quantum Dots
• Differences in Tunneling Time between 77 K and Room Temperature for Tunneling Biquantum Wells
• Fast Recovery from Excitonic Absorption Bleaching in Type-II : GaAs/AlGaAs/AlAs Tunneling Biquantum Well
• Quantum Well Width Dependence of Negative Differential Resistance of In_Al_As/In_Ga_As Resonant Tunneling Barriers Grown by MBE
• Extremely High 2DEG Concentration in Selectively Doped In_Ga_As/N-In_Al_As Heterostructures Grown by MBE
• Conduction Band Edge Discontinuity of In_Ga_As/In_(Ga_1 _xAl_x)_As(0≦x≦1) Heterostructures
• MBE Growth of InGaAlAs Lattice-Matched to InP by Pulsed Molecular Beam Method
• MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source
• High Speed Resistive Switching in Pt/TiO_2/TiN Resistor for Multiple-Valued Memory Device
• Lowering the Switching Current of Resistance Random Access Memory Using a Hetero Junction Structure Consisting of Transition Metal Oxides

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