Sakuma Yoshiki | Fujitsu Laboratories Ltd.
スポンサーリンク
概要
関連著者
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SAKUMA Yoshiki
Fujitsu limited
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Sakuma Yoshiki
Fujitsu Laboratories Ltd.
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YOKOYAMA Naoki
Fujitsu Laboratories Ltd.
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SUGIYAMA Yoshihiro
Fujitsu Limited
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Sugiyama Y
Fujitsu Laboratories Ltd.
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Muto Shigeki
Department Of Physics School Of Science Tokai University
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武藤 真三
山梨大学
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Muto S
Kek Ibaraki
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Yokoyama Naoki
Department of Pediatrics, Kobe University Graduate School of Medicine
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Sugiyama Yoshinobu
Fujitsu Laboratories Ltd.
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Yokoyama N
Fujitsu Laboratories Ltd.
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Yokoyama Naoki
Institute For Nano Quantum Information Electronics The University Of Tokyo
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Sugiyama Yoshihiro
Fujitsu Laboratories Ltd.
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SAKUMA Yoshiki
National Institute for Materials Science
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AWANO Yuji
Fujitsu Ltd.
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MUTO Shunichi
Fujitsu Laboratories Ltd.
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SEKIGUCHI Takashi
Institute for Materials Research, Tohoku University
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MUTO Shunichi
the Faculty of Engineering, Hokkaido University
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Sakuma Y
Fujitsu Laboratories Ltd.
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Awano Yuji
Fujitsu Lab. Ltd. Kanagawa Jpn
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Awano Y
Fujitsu Ltd. Atsugi Jpn
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Awano Yuji
Fujitsu Laboratories Ltd.
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Ozeki Masashi
Fujitsu Laboratories Ltd.
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Ozeki Masashi
Fujitsu Laboratories
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KODAMA Kunihiko
Fujitsu Laboratories Limited
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Yokoyama Naoki
Fujitsu Limited
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Muto Shunich
FUJITSU LIMITED
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Sekiguchi Takashi
Department Of Physics Faculty Of Science Tohoku University:the Research Institute For Iron Steel And
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Segawa Yusaburo
Photodynamics Research Center Riken (institute Of Physical And Chemical Research)
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Sekiguchi T
Institute For Materials Research Tohoku Unviersity
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Sekiguchi Takashi
Nanomaterials Laboratory National Institute For Materials Science (nims)
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Sekiguchi Takashi
Department Of Chemistry And Materials Technology Kyoto Institute Of Technology
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Sekiguchi Takashi
Nanomaterials Laboratory National Institute For Materials Science
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Kodama Kunihiko
Fujitsu Laboratories Ltd.
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Sekiguchi Takashi
Advanced Nano-characterization Center National Institute For Materials Science
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Sekiguchi Takashi
Institute For Materials Research Tohoku University
著作論文
- InGaAs/GaAs Tetrahedral-Shaped Recess Quantum Dot (TSR-QD)Technology (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Novel InGaAs/GaAs Quantum Dot Structures Formed in Tetrahedral-Shaped Recesses on (111) B GaAs Substrate Using Metalorganic Vapor Phase Epitaxy
- Selective Growth of GaAs by Pulsed-Jet Epitaxy (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
- Self-Limited Growth in InP Epitaxy by Alternate Gas Supply : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)