Self-Limited Growth in InP Epitaxy by Alternate Gas Supply : III-V Compound Semiconductors Devices and Materials(<Special Section>Solid State Devices and Materials 1)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-11-20
著者
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SAKUMA Yoshiki
Fujitsu limited
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Ozeki Masashi
Fujitsu Laboratories Ltd.
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Ozeki Masashi
Fujitsu Laboratories
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KODAMA Kunihiko
Fujitsu Laboratories Limited
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Sakuma Yoshiki
Fujitsu Laboratories Ltd.
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Kodama Kunihiko
Fujitsu Laboratories Ltd.
関連論文
- InGaAs/GaAs Tetrahedral-Shaped Recess Quantum Dot (TSR-QD)Technology (Special Issue on Quantum Effect Devices and Their Fabrication Technologies)
- Novel InGaAs/GaAs Quantum Dot Structures Formed in Tetrahedral-Shaped Recesses on (111) B GaAs Substrate Using Metalorganic Vapor Phase Epitaxy
- Energy-Band Offset of In_Ga_As-In_(Ga_AI_x)_As Heterostructures, Determined by Photoluminescenee Excitation Spectroscopy of Quasi-Parabolie Quantum Wells Grown by MBE
- Selective Growth of GaAs by Pulsed-Jet Epitaxy (Special Issue on Heterostructure Devices and Epitaxial Growth Techniques)
- Self-Limited Growth in InP Epitaxy by Alternate Gas Supply : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
- Observation of Donor-Related Deep Levels in Ga_xIn_P (0.52≦x≦0.71) : Semiconductors and Semiconductor Devices
- Two-Dimensional-Electron Gas in Undoped and Selectively-Doped GaInP/GaAs Heterostructures Grown by Chloride-Vapor-Phase Epitaxy
- Near-Band-Edge Photoluminescenee of High-Purity Ga_xIn_P Grown by Chloride Vapor-Phase Epitaxy
- Donor-Related Deep Level in S-Doped Ga_In_P Grwon by Chloride VPE
- Photoluminescence Excitation Spectroscopy of In_Ga_,As/InP Multi-Quantum-Well Heterostructures
- Shallow and Deep Donor Levels in S-Doped Ga_In_P Grown by Chloride VPE
- Two-Dimensional Electron Gas at GaAs/Ga_In_P Heterointerface Grown by Chloride Vapor-Phase Epitaxy
- Growth of InGaAsP Quaternary by Chloride VPE
- Reflection High-Energy Electron Diffraction of Heteroepitaxy in Chemical Vapor Deposition Reactor : Atomic-Layer Epitaxy of GaAs, AlAs and GaP on Si
- Layer-by-Layer Growth of AlAs Buffer Layer for GaAs on Si at Low Temperature by Atomic Layer Epitaxy
- Control of GaAs on Si Interface Using Atomic Layer Epitaxy
- Quantitative Analysis of In Densityin Semi-Insulating GaAs by Photoluminescence
- Nondestructive Resistivity Measurement of Semi-Insulating GaAs Using Illuminated n^+-GaAs Contacts
- Optical Observation of Inhomogeneity of Chromium-Doped Semi-Insulating GaAs
- Residual Donors in High Purity Gallium Arsenide Epitaxially Grown from Vapor Phase
- Photo-Ionization Cross Section Measurements of Deep Levels in Iron Doped GaAs
- Photoluminescence of GaAs Grown by Vapor Phase Epitaxy
- Photoluminescence Study of Carbon Doped Gallium Arsenide
- Near Band-Edge Photoluminescence of Zn, Cd, Si and Ge Doped Epitaxial GaAs
- Reflectance Spectroscopy of (GaP)_n(GaAs)_n/GaAs Atomic Layer Superlattices
- Annealing Study of Bi-Sr-Ca-Cu-O Superconducting Thin Film
- Magnetophonon Effect and Energy Band Parameters of InP
- Magnetophonon Resonance in n-InP : Physical Acoustics
- Emission Mechanism in In_Ga_As/InP Quantum-Well Heterostructures Grown by Chloride Vapor-Phase Epitaxy
- Alloy Fluctuation Effect on Electronic Transition Properties of DX Center Observed with Modified Deep Level Transient Spectroscopy
- Exciton-Transition Energies and Band Structure of (GaP)_n(GaAs)_n/GaAs Atomic-Layer Superlattices