Exciton-Transition Energies and Band Structure of (GaP)_n(GaAs)_n/GaAs Atomic-Layer Superlattices
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概要
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We studied exciton transitions and the band structure of (GaP)_n(GaAs)_n/GaAs [001] superlattices for n=1-4, using reflectance and photoluminescence spectral measurements. The exciton-transition energy showed a prominent drop for n=1 by 90 meV for n=2-4. This was attributable to the intensified delocalization of Γ electrons in the GaAs well by funneling through the extremely thin GaP barrier layers. The transition was defined as direct for n=1, but indirect for n=2-4 by comparing the energies of exciton absorption and photoluminescence emission from the lowest excited state.
- 社団法人応用物理学会の論文
- 1991-06-01
著者
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Ozeki Masashi
Fujitsu Laboratories
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Ozeki Masashi
Fujitsu Laboratotries Ltd.
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TAKANOHASHI Tsugunori
Fujitsu Laboratories Ltd.
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Takanohashi Tsugunori
Fujitsu Laboratotries Ltd.
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Takanohashi Tsugunori
Fujitsu Laboratories
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