Alloy Fluctuation Effect on Electronic Transition Properties of DX Center Observed with Modified Deep Level Transient Spectroscopy
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概要
- 論文の詳細を見る
Alloy fluctuation effects in electronic transition properties of the DX center have been studied in a selectively Si doped Al_<0.3>Ga_<0.7>As/ GaAs heterostructure grown by molecular beam epitaxy. Using deep-level-transient-spectroscopy (DLTS)technictue, we have measured the drain current transient, from an applied sale pulse for a long sate hizh-electron-mobility-transistor biased in a linear region. This scheme enables us to record DLTS-like spectra not only for the elec-tron emission process but also for the electron capture process of the DX center. From the analysis of these spectra, wefound capture and emission activation energies with Gaussian distributions having wide and narrow band-widths, respec-tively. This can be explained by considering the large fluctuations of electronic states and the small fluctuations of thespring constant and Jahn-Teller splitting parameter in the DX center cell.
- 社団法人応用物理学会の論文
- 1985-03-20
著者
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Ozeki Masashi
Fujitsu Laboratories
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Ozeki Masashi
Fujitsu Ltd
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TAKIKAWA Masahiko
Fujitsu Laboratories Ltd.
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Takikawa Masahiko
Fujitsu Ltd
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