Nondestructive Resistivity Measurement of Semi-Insulating GaAs Using Illuminated n^+-GaAs Contacts
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1984-12-20
著者
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Ozeki Masashi
Fujitsu Laboratories Ltd.
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Ozeki Masashi
Fujitsu Laboratories
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Kitahara Kuninori
Fujitsu Laboratories Ltd.
関連論文
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- Photoluminescence Excitation Spectroscopy of In_Ga_,As/InP Multi-Quantum-Well Heterostructures
- Shallow and Deep Donor Levels in S-Doped Ga_In_P Grown by Chloride VPE
- Two-Dimensional Electron Gas at GaAs/Ga_In_P Heterointerface Grown by Chloride Vapor-Phase Epitaxy
- Growth of InGaAsP Quaternary by Chloride VPE
- Observation of Atomic Steps on Vicinal Si(111) Annealed in Hydrogen Gas Flow by Scanning Tunneling Microscopy
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- Control of GaAs on Si Interface Using Atomic Layer Epitaxy
- Quantitative Analysis of In Densityin Semi-Insulating GaAs by Photoluminescence
- Observation of Atomic Structure by Scanning Tunneling Microscopy of Vicinal Si(100) Surface Annealed in Hydrogen Gas
- Nondestructive Resistivity Measurement of Semi-Insulating GaAs Using Illuminated n^+-GaAs Contacts
- Optical Observation of Inhomogeneity of Chromium-Doped Semi-Insulating GaAs
- Current Limitation Induced by Infrared Light in n-Type GaAs Thin Layers on Semi-Insulating Cr-Doped GaAs
- Substrate Bias Effect on Ion-Implanted GaAs MESFETs
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