Phase Variation of Amorphous-Si and Poly-Si Thin Films with Excimer Laser Irradiation
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-11-15
著者
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HARA Akito
Fujitsu Laboratories Limited
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SUGA Katsuyuki
Fujitsu Laboratories Limited
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NAKAJIMA Kazuo
Fujitsu Laboratories Ltd.
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Kitahara K
Interdisciplinary Faculty Of Science And Engineering Shimane University
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Kitahara Kuninori
Fujitsu Laboratories Ltd.
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Hara Akito
Fujitsu Lab. Ltd.
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Suga Katsuyuki
Fujitsu Laboratories Ltd.
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Nakajima Kazuo
Fujitsu Laboratories Lid.
関連論文
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- High Performance Low Temperature Polycrystalline Silicon Thin Film Transistors on Non-alkaline Glass Produced Using Diode Pumped Solid State Continuous Wave Laser Lateral Crystallization
- High-Performance Polycrystalline Silicon Thin Film Transistors on Non-Alkali Glass Produced Using Continuous Wave Laser Lateral Crystallization : Semiconductors
- The Acceptor Level of Fe in In_ Ga_ P
- Observation of Donor-Related Deep Levels in Ga_xIn_P (0.52≦x≦0.71) : Semiconductors and Semiconductor Devices
- Two-Dimensional-Electron Gas in Undoped and Selectively-Doped GaInP/GaAs Heterostructures Grown by Chloride-Vapor-Phase Epitaxy
- Near-Band-Edge Photoluminescenee of High-Purity Ga_xIn_P Grown by Chloride Vapor-Phase Epitaxy
- Donor-Related Deep Level in S-Doped Ga_In_P Grwon by Chloride VPE
- Photoluminescence Excitation Spectroscopy of In_Ga_,As/InP Multi-Quantum-Well Heterostructures
- Shallow and Deep Donor Levels in S-Doped Ga_In_P Grown by Chloride VPE
- Two-Dimensional Electron Gas at GaAs/Ga_In_P Heterointerface Grown by Chloride Vapor-Phase Epitaxy
- EBIC Observation on the InP/InGaAs/InP Heterostructure Photodiode
- Observation of Atomic Steps on Vicinal Si(111) Annealed in Hydrogen Gas Flow by Scanning Tunneling Microscopy
- Analysis of Defects in Polycrystalline Silicon Thin Films Using Raman Scattering Spectroscopy
- Analysis of Stress in Laser-Crystallized Polysilicon Thin Films by Raman Scattering Spectroscopy
- Observation of Defects in Laser-Crystallized Polysilicon Thin Films by Hydrogenation and Raman Spectroscopy
- A New Approach for Form Polycrystalline Silicon by Excimer Laser Irradiation with a Wide Range of Energies
- Micro-Scale Characterization of Crystalline Phase and Stress in Laser-Crystallized Poly-Si Thin Films by Raman Spectroscopy
- Silicon-Hydrogen Bonds in Laser-Crystallized Polysilicon Thin Films and Their Effects on Electron Mobility
- Phase Variation of Amorphous-Si and Poly-Si Thin Films with Excimer Laser Irradiation
- Chemical-Vapor Deposition Techniques of Al for Direct Growth on Oxidized Si and High-Speed Growth
- Reflection High-Energy Electron Diffraction of Heteroepitaxy in Chemical Vapor Deposition Reactor : Atomic-Layer Epitaxy of GaAs, AlAs and GaP on Si
- Layer-by-Layer Growth of AlAs Buffer Layer for GaAs on Si at Low Temperature by Atomic Layer Epitaxy
- Control of GaAs on Si Interface Using Atomic Layer Epitaxy
- Quantitative Analysis of In Densityin Semi-Insulating GaAs by Photoluminescence
- Observation of Atomic Structure by Scanning Tunneling Microscopy of Vicinal Si(100) Surface Annealed in Hydrogen Gas
- Nondestructive Resistivity Measurement of Semi-Insulating GaAs Using Illuminated n^+-GaAs Contacts
- Optical Observation of Inhomogeneity of Chromium-Doped Semi-Insulating GaAs
- Current Limitation Induced by Infrared Light in n-Type GaAs Thin Layers on Semi-Insulating Cr-Doped GaAs
- Substrate Bias Effect on Ion-Implanted GaAs MESFETs
- Residual Donors in High Purity Gallium Arsenide Epitaxially Grown from Vapor Phase
- Photo-Ionization Cross Section Measurements of Deep Levels in Iron Doped GaAs
- 1.3 μm InGaAs/InAlGaAs Strained Quantum Well Lasers on InGaAs Ternary Substrates
- Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser Irradiation
- Emission Mechanism in In_Ga_As/InP Quantum-Well Heterostructures Grown by Chloride Vapor-Phase Epitaxy
- Influence of Grown-in Hydrogen on Thermal Donor Formation and Oxygen Precipitation in Czochralski Silicon Crystals
- Dependence of Rocking Curve for Thin In_Ga_xAs_P_y Layer on Thickness in a Symmetric Bragg Case
- Direct LPE Growth of InP on (111)A Oriented In_Ga_As without Dissolution
- Control of Nucleation and Solidification Direction of Polycrystalline Silicon by Excimer Laser Irradiation
- Intrinsic Gettering of Iron Impurities in Silicon Wafers
- Effect of Implanted Oxygen and Nitrogen on Mobility and Generation of Dislocation in SiGe/Si Heterostructure
- Distribution of Fe in an Intrinsic Gettered Silicon Wafer after Annealing at Supersaturation Temperature
- Hydrogen-like Ultrashallow Thermal Donors in Silicon Crystals
- Selective Single-Crystalline-Silicon Growth on Non-Alkali Glass
- SIMS and DLTS Measurements on Fe-Doped InP Epitaxial Layers Grown by MOCVD : Semiconductors and Semiconductor Devices
- Local Atomic Arrangement in an In_Ga_As Quasi-Binary Alloy Grown by Liquid-Phase Epitaxy
- High Performance Low Temperature Polycrystalline Silicon Thin Film Transistors on Non-alkaline Glass Produced Using Diode Pumped Solid State Continuous Wave Laser Lateral Crystallization
- Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser Irradiation
- Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline Silicon Thin-Film Transistors on Non-Alkali Glass Substrate Using Diode-Pumped Solid-State Continuous Wave Laser Lateral Crystallization
- Electron Spin Resonance of Oxygen-Nitrogen Complex in Silicon
- Effects of Grown-in Hydrogen on Lifetime of Czochralski Silicon Crystals