Effect of Implanted Oxygen and Nitrogen on Mobility and Generation of Dislocation in SiGe/Si Heterostructure
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Tamura Naoyoshi
Fujitsu Lab. Ltd. Tokyo Jpn
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HARA Akito
Fujitsu Laboratories Limited
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NAKAMURA Tomoji
Fujitsu Laboratories Ltd., Akiruno Technology Center
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Hara Akito
Fujitsu Lab. Ltd.
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Nakamura Tomoji
Fujitsu Lab. Ltd.
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Tamura Naoyoshi
Fujitsu Lab. Ltd.
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