Stress Migration Phenomenon in Narrow Copper Interconnects
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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SUZUKI Takashi
Fujitsu Laboratories Ltd.
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Nakamura Tomoji
Fujitsu Laboratories Ltd.
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Nakamura Tomoji
Fujitsu Lab. Ltd.
関連論文
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- Effect of Implanted Oxygen and Nitrogen on Mobility and Generation of Dislocation in SiGe/Si Heterostructure
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- Transmission Electron Microscopy Observation of CoSi_x Spikes in Si Substrates during Co-silicidation Process
- Simple Modeling and Characterization of Stress Migration Phenomena in Cu Interconnects
- Influence of Titanium Liner on Resistivity of Copper Interconnects
- Effect of Layout Variation on Stress Migration in Dual Damascene Copper Interconnects
- Diffusion Resistance of Low Temperature Chemical Vapor Deposition Dielectrics for Multiple Through Silicon Vias on Bumpless Wafer-on-Wafer Technology
- Novel Through Silicon Vias Leakage Current Evaluation Using Infrared-Optical Beam Irradiation
- Characterization of Local Strain around Through-Silicon Via Interconnects by Using X-ray Microdiffraction
- Observation of Dislocation Motion in Si1-xGex Thin Film on Si Substrate by Laser Scattering Method
- Development of Cu/Insulation Layer Interface Crack Extension Simulation with Crystal Plasticity
- Impact of Thermomechanical Stresses on Bumpless Chip in Stacked Wafer Structure
- Effect of Ion Implantation on Dislocation Motion in SiGe/Si Heterostructure