Effect of Ion Implantation on Dislocation Motion in SiGe/Si Heterostructure
スポンサーリンク
概要
- 論文の詳細を見る
We studied the effects of ion implantation on the dislocation motion in the SiGe/Si heterostructure. In this experiment, oxygen and nitrogen were implanted in the SiGe layer with the same implantation energy and dose. It was observed that the mobility and activation energy of the dislocation motion in the implanted SiGe/Si heterostructure decreased and increased, respectively. This decrease in mobility and increase in activation energy were larger in the oxygen-implanted samples than in the nitrogen-implanted samples. It was also observed that the recovery of this reduced mobility to its original value commenced at temperatures exceeding 700 °C. It was supposed that this decrease in mobility and increase in activation energy of the dislocation motion are attributable to the generation of microdefects, which offer resistance to the gliding motion of a threading dislocation.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-06-15
著者
-
Hara Akito
Electrical Engineering Faculty Of Engineering Tohoku Gakuin University
-
Nakamura Tomoji
Fujitsu Lab. Ltd.
-
Tamura Naoyoshi
Fujitsu Lab. Ltd.
-
Hara Akito
Electrical Engineering, Faculty of Engineering, Tohoku Gakuin University, Tagajo, Miyagi 985-8537, Japan
-
Nakamura Tomoji
Fujitsu Laboratories Ltd., 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
関連論文
- Investigation of Degradation model for Ultra-thin Gate Dielectrics
- Electrical Properties of SiN/HfO_2/SiON Gate Stacks with High Thermal Stability(High-κ Gate Dielectrics)
- Thermal Expansion Coefficients of Nano-Clustering Silica (NCS) Films Measured by X-Ray Reflectivity and Substrate Curvature Methods
- Effect of Implanted Oxygen and Nitrogen on Mobility and Generation of Dislocation in SiGe/Si Heterostructure
- Fabrication of Large Lateral Polycrystalline Silicon Film by Laser Dehydrogenation and Lateral Crystallization of Hydrogenated Nanocrystalline Silicon Films
- Stress Migration Phenomenon in Narrow Copper Interconnects
- Suppression of the Phase Transition to C54 TiSi_2 due to Epitaxial Growth of C49 TiSi_2 on Si(001) Substrates in Silicidation Process
- Grazing Incidence X-Ray Diffraction Study on Effect of Implanted BF^+_2 and Linewidth on Titanium Silicidation
- Transmission Electron Microscopy Observation of CoSi_x Spikes in Si Substrates during Co-silicidation Process
- Simple Modeling and Characterization of Stress Migration Phenomena in Cu Interconnects
- Diffusion Coefficient of Hydrogen in Silicon at an Intermediate Temperature
- Influence of Titanium Liner on Resistivity of Copper Interconnects
- Effect of Layout Variation on Stress Migration in Dual Damascene Copper Interconnects
- Diffusion Resistance of Low Temperature Chemical Vapor Deposition Dielectrics for Multiple Through Silicon Vias on Bumpless Wafer-on-Wafer Technology
- Growth of Quasi-Single-Crystal Silicon--Germanium Thin Films on Glass Substrates by Continuous Wave Laser Lateral Crystallization
- Novel Through Silicon Vias Leakage Current Evaluation Using Infrared-Optical Beam Irradiation
- Characterization of Local Strain around Through-Silicon Via Interconnects by Using X-ray Microdiffraction
- Observation of Dislocation Motion in Si1-xGex Thin Film on Si Substrate by Laser Scattering Method
- Potential of and Issues with Multiple-Stressor Technology in High-Performance 45 nm Generation Devices
- Development of Cu/Insulation Layer Interface Crack Extension Simulation with Crystal Plasticity
- Impact of Thermomechanical Stresses on Bumpless Chip in Stacked Wafer Structure
- Impact of the Hydrogenation Process on the Performance of Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline-Silicon Thin-Film Transistors
- Impact of the Hydrogenation Process on the Performance of Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline-Silicon Thin-Film Transistors (Special Issue : Active-Matrix Flatpanel Displays and Devices : TFT Technologies and FPD Materials)
- Effect of Ion Implantation on Dislocation Motion in SiGe/Si Heterostructures
- Structural Elements of Shallow Thermal Donors Formed in Nitrogen-Gas-Doped Silicon Crystals
- Effect of Ion Implantation on Dislocation Motion in SiGe/Si Heterostructure