Characterization of Local Strain around Through-Silicon Via Interconnects by Using X-ray Microdiffraction
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概要
- 論文の詳細を見る
We have demonstrated the characterization of the local strain structure in thinned Si layers for wafer-on-a-wafer (WOW) applications by using X-ray microdiffraction with a synchrotron radiation source. The microdiffraction reveals the fluctuation of strains in the thin Si layer around through-silicon via (TSV) interconnects with a sub-micrometer scale. We can separately estimated the in-plane and out-of-plane strain structures in the Si layer, and found that the anisotropic strain is induced in the Si layer between the TSV interconnects.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2011-05-25
著者
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Nakamura Tomoji
Fujitsu Lab. Ltd.
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Kim Youngsuk
School Of Mechanical Engineering Kyungpook National University
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Zaima Shigeaki
Graduate School Of Eng. Nagoya Univ.
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Nakatsuka Osamu
Graduate School Of Engineering Nagoya University
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Ohba Takayuki
School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Kitada Hideki
School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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Mizushima Yoriko
Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
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Nakatsuka Osamu
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Nakatsuka Osamu
Graduate School of Eng., Nagoya Univ.
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Zaima Shigeaki
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
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Mizushima Yoriko
Fujitsu Laboratories Ltd., Akiruno Technology Center, 50 Fuchigami, Akiruno, Tokyo 197-0833, Japan
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Kim Youngsuk
School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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