Nitrogen-Content Dependence of Crystalline Structures and Resistivity of Hf–Si–N Gate Electrodes for Metal–Oxide–Semiconductor Field-Effect Transistors

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概要

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• The dependences of crystalline structures and resistivity of Hf–Si–N films on nitrogen content were investigated in this study. The nitrogen (N) content of Hf–Si–N films increases with increasing N2 concentration in a N2/Ar mixture ambient used in sputtering, and saturates to about 59% at N2 concentrations of 4.8% and above. This indicates that all Hf and Si atoms form HfN and Si3N4 in the films, respectively. From X-ray diffraction (XRD) profiles, nanocrystallites exist even in as-deposited films with saturated N content. However, they hardly grow after post deposition annealing (PDA) at 900 °C. The resistivity values are almost constant at N2 concentrations of 4.8% and below. On the other hand, they significantly increase with increasing N2 concentration above 4.8% and consequently become unmeasurable at N2 concentrations of 13.0% and above. The XRD profiles indicate that nanocrystallites segregating in those films are related to Hf3N4.

• 2009-04-25

著者

• KONDO Hiroki

  Graduate School of Engineering, Nagoya University

• Furumai Kouhei

  Graduate School Of Engineering Nagoya University

• Zaima Shigeaki

  Graduate School Of Eng. Nagoya Univ.

• Furumai Kouhei

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

• Urban Ben

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

• Miyamoto Kazuaki

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

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