Behaviors of Absolute Densities of N, H, and NH3 at Remote Region of High-Density Radical Source Employing N2--H2 Mixture Plasmas

スポンサーリンク

概要

• 論文の詳細を見る

• For an innovation of molecular-beam-epitaxial (MBE) growth of gallium nitride (GaN), the measurements of absolute densities of N, H, and NH3 at the remote region of the radical source excited by plasmas have become absolutely imperative. By vacuum ultraviolet absorption spectroscopy (VUVAS) at a relatively low pressure of about 1 Pa, we obtained a N atom density of $9\times 10^{12}$ cm-3 for a pure nitrogen gas used, a H atom density of $7\times 10^{12}$ cm-3 for a gas composition of 80% hydrogen mixed with nitrogen gas were measured. The maximum density $2\times 10^{13}$ cm-3 of NH3 was measured by quadruple mass spectrometry (QMS) at $\text{H$_{2}$}/(\text{N$_{2}$}+\text{H$_{2}$})=60$%. Moreover, we found that N atom density was considerably affected by processing history, where the characteristic instability was observed during the pure nitrogen plasma discharge sequentially after the hydrogen-containing plasma discharge. These results indicate imply the importance of establishing radical-based processes to control precisely the absolute densities of N, H, and NH3 at the remote region of the radical source.

• 2011-01-25

著者

• KONDO Hiroki

  Graduate School of Engineering, Nagoya University

• Hori Masaru

  Graduate School Of Engineering Nagoya University

• KANO Hiroyuki

  NU Eco-Engineering Co., Ltd.

• Den Shoji

  Katagiri Engineering Co. Ltd.

• Takeda Keigo

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

• Chen Shang

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

• Ishikawa Kenji

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

• Sekine Makoto

  Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

• Kano Hiroyuki

  NU Eco Engineering Co., Ltd., Miyoshi, Aichi 470-0201, Japan

関連論文

• Pr-Oxide-Based Dielectric Films on Ge Substrates
• Nanoscale Observations for Degradation Phenomena in SiO_2 and High-k Gate Insulators Using Conductive-Atomic Force Microscopy
• Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors
• Development of Compact C_2F_4 Gas Supply Equipment and Its Application to Etching of Dielectrics in an Environmental Benign Process
• New Compact Continuous Spectrum Light Source Using Atmospheric Pressure Microplasma with High-Velocity Ar Gas Flow
• Control of Electric Conduction of Carbon Nanowalls
• Electrical Characterization of Carbon Nanowalls
• Growth of Preferentially Oriented Microcrystalline Silicon Film Using Pulse-Modulated Ultrahigh-Frequency Plasma
• Behaviors of Absolute Densities of N, H, and NH3 at Remote Region of High-Density Radical Source Employing N2--H2 Mixture Plasmas
• Combinatorial Analysis of Plasma–Surface Interactions of Poly(ethylene terephthalate) with X-ray Photoelectron Spectroscopy
• Laser Scattering Diagnosis of a 60-Hz Non-Equilibrium Atmospheric Pressure Plasma Jet
• Impacts of CF+, CF2+, CF3+, and Ar Ion Beam Bombardment with Energies of 100 and 400 eV on Surface Modification of Photoresist
• Measurement of Hydrogen Radical Density and Its Impact on Reduction of Copper Oxide in Atmospheric-Pressure Remote Plasma Using H2 and Ar Mixture Gases
• Development of Compact C2F4 Gas Supply Equipment and Its Application to Etching of Dielectrics in an Environmental Benign Process
• Control of interfacial properties of Al2O3/Ge gate stack structure using radical nitridation technique (Special issue: Dielectric thin films for future electron devices: science and technology)
• Nitrogen-Content Dependence of Crystalline Structures and Resistivity of Hf–Si–N Gate Electrodes for Metal–Oxide–Semiconductor Field-Effect Transistors
• Thermal Stability and Scalability of Mictamict Ti–Si–N Metal–Oxide–Semiconductor Gate Electrodes
• Nitriding of Polymer by Low Energy Nitrogen Neutral Beam Source
• Ultrahigh-Speed Synthesis of Nanographene Using Alcohol In-Liquid Plasma
• Line-Profiles and Translational Temperatures of Pb Atoms in Multi-Micro Hollow Cathode Lamp Measured by Diode Laser Absorption Spectroscopy
• Properties of Indium--Zinc-Oxide Films Synthesized by Radio Frequency Magnetron Sputtering Based on Gas Phase Monitoring Using Multi-Micro Hollow Cathode Lamp
• Fabrication of Carbon Nanowalls on Carbon Fiber Paper for Fuel Cell Application
• Highly Selective Etching of SiO2 over Si3N4 and Si in Capacitively Coupled Plasma Employing C5HF7 Gas
• An Autonomously Controllable Plasma Etching System Based on Radical Monitoring
• Crystalline and Electrical Properties of Mictamict TiSiN Gate Metal–Oxcide–Semiconductor Capacitors
• Crystalline Structures and Electrical Properties of High-Nitrogen-Content Hf–Si–N Films
• Surface Modification Process of Contact Lens Using Three-Phase AC Excited Nonequilibrium Atmospheric Pressure Ar Plasma
• A High-Temperature Nitrogen Plasma Etching for Preserving Smooth and Stoichiometric GaN Surface
• Supercritical Fluid Deposition of High-Density Nanoparticles of Photocatalytic TiO
• Composition Dependence of Work Function in Metal (Ni,Pt)–Germanide Gate Electrodes
• High H Radical Density Produced by 1-m-Long Atmospheric Pressure Microwave Plasma System
• High H Radical Density Produced by 1-m-Long Atmospheric Pressure Microwave Plasma System (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
• A High-Temperature Nitrogen Plasma Etching for Preserving Smooth and Stoichiometric GaN Surface
• Estimation of Pharmaceutical Removal in a Sewage Treatment Plant -Model Simulation Based on Laboratory Test Data-
• Supercritical Fluid Deposition of High-Density Nanoparticles of Photocatalytic TiO_2 on Carbon Nanowalls

もっと見る 閉じる

スポンサーリンク