KONDO Hiroki | Graduate School of Engineering, Nagoya University

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著作論文

Pr-Oxide-Based Dielectric Films on Ge Substrates
Nanoscale Observations for Degradation Phenomena in SiO_2 and High-k Gate Insulators Using Conductive-Atomic Force Microscopy
Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors
Behaviors of Absolute Densities of N, H, and NH3 at Remote Region of High-Density Radical Source Employing N2--H2 Mixture Plasmas
Impacts of CF+, CF2+, CF3+, and Ar Ion Beam Bombardment with Energies of 100 and 400 eV on Surface Modification of Photoresist
Control of interfacial properties of Al2O3/Ge gate stack structure using radical nitridation technique (Special issue: Dielectric thin films for future electron devices: science and technology)
Nitrogen-Content Dependence of Crystalline Structures and Resistivity of Hf–Si–N Gate Electrodes for Metal–Oxide–Semiconductor Field-Effect Transistors
Thermal Stability and Scalability of Mictamict Ti–Si–N Metal–Oxide–Semiconductor Gate Electrodes
Highly Selective Etching of SiO2 over Si3N4 and Si in Capacitively Coupled Plasma Employing C5HF7 Gas
Crystalline and Electrical Properties of Mictamict TiSiN Gate Metal–Oxcide–Semiconductor Capacitors
Crystalline Structures and Electrical Properties of High-Nitrogen-Content Hf–Si–N Films
A High-Temperature Nitrogen Plasma Etching for Preserving Smooth and Stoichiometric GaN Surface
Composition Dependence of Work Function in Metal (Ni,Pt)–Germanide Gate Electrodes
High H Radical Density Produced by 1-m-Long Atmospheric Pressure Microwave Plasma System
High H Radical Density Produced by 1-m-Long Atmospheric Pressure Microwave Plasma System (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
A High-Temperature Nitrogen Plasma Etching for Preserving Smooth and Stoichiometric GaN Surface

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