SAKAI Akira | Graduate School of Engineering, Nagoya University

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概要

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著作論文

Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
Thermal Stability and Electrical Properties of (La_2O_3)_(Al_2O_3)_x Composite Films
HfO_2 Film Formation Combined with Radical Nitridation and Its Electrical Characteristic
Electrical Properties and Solid-Phase Reactions in Ni/Si(100) Contacts
Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi_2/Si Schottky Contacts Formed from Ni/Ti/Si System
Pr-Oxide-Based Dielectric Films on Ge Substrates
Behavior of Local Charge Trapping Sites in La_2O_3-Al_2O_3 Composite Films under Constant Voltage Stress
Local Current Leakage Characterization in La_2O_3-Al_2O_3 Composite Films by Conductive Atomic Force Microscopy
Nanoscale Observations for Degradation Phenomena in SiO_2 and High-k Gate Insulators Using Conductive-Atomic Force Microscopy
Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors
Film structures and electrical properties of Pr silicate formed by pulsed laser deposition
Scanning Tunneling Microscopy of Initial Nitridation Processes on Oxidized Si(100) Surface with Radical Nitrogen
Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
Thermal Stability and Electrical Properties of (La_2O_3)_(Al_2O_3)_x Composite Films
Electrical Properties and Solid-Phase Reactions in Ni/Si(100) Contacts
Annealing Effects on Ge/SiO2 Interface Structure in Wafer-Bonded Germanium-on-Insulator Substrates
Mechanical Properties and Chemical Reactions at the Directly Bonded Si–Si Interface
Epitaxial Ag Layers on Si Substrates as a Buffer Layer for Carbon Nanotube Growth
Thermal Stability and Scalability of Mictamict Ti–Si–N Metal–Oxide–Semiconductor Gate Electrodes
Crystalline and Electrical Properties of Mictamict TiSiN Gate Metal–Oxcide–Semiconductor Capacitors
Dependence of Electrical Characteristics on Interfacial Structure of Epitaxial NiSi2/Si Schottky Contacts Formed from Ni/Ti/Si System
Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates
Scanning Tunneling Microscopy of Initial Nitridation Processes on Oxidized Si(100) Surface with Radical Nitrogen
Composition Dependence of Work Function in Metal (Ni,Pt)–Germanide Gate Electrodes
Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge1-xSnx Buffer Layers for Tensile-Strained Ge Layers

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