Yasuda Yukio | Shionogi Research Laboratories Shionogi & Co. Ltd.

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概要

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著作論文

Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
Structural and Electrical Characteristics of HfO_2 Films Fabricated by Pulsed Laser Deposition
Growth Processes and Electrical Characteristics of Silicon Nitride Films Formed on Si(100) by Radical Nitrogen
Electrical Properties and Solid-Phase Reactions in Ni/Si(100) Contacts
Conductance Oscillations in Hopping Conduction Systems Fabricated by Focused Ion Beam Implantation ( Quantum Dot Structures)
Hydrogen Effects on Heteroepitaxial Growth of Ge Films on Si(111) Surfaces by Solid Phase Epitaxy
Hydrogen Effects on Si_Ge_x/Si Heteroepitaxial Growth by Si_2H_6- and GeH_4-Source Molecular Beam Epitaxy
Terprenins, Novel Immunosuppressants Prduced by Aspergillus candidus
Salfredins, New Aldose Reductase Inhibitors Produced by Crucibulum sp.RF-3817 I.Fermentation, Isolation and Structures of Salfredins
Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
Thermal Stability and Electrical Properties of (La_2O_3)_(Al_2O_3)_x Composite Films
Initial Oxidation Processes of H-Terminated Si(100) Surfaces Analyzed using a Random Sequential Adsorption Model
Influences of Impurities on Oxidation Processes of Si(100) Substrates
Influences of Impurities on Oxidation Processes of Si(100) Substrates
Growth Processes and Electrical Characteristics of Silicon Nitride Films Formed on Si(100) by Radical Nitrogen
Microscopic Observation of X-Ray Irradiation Damages in Ultra-Thin SiO_2 Films
Electrical Properties and Solid-Phase Reactions in Ni/Si(100) Contacts
Structural and Electrical Characteristics of HfO_2 Films Fabricated by Pulsed Laser Deposition
Coulomb Blockade Phenomena in Si Metal-Oxide-Semiconductor Field-Effect Transistors with Nano-Scale Channels Fabricated Using Focused-Ion Beam Implantation
Control of Crystal Structure and Ferroelectric Properties of Pb(Zr_xTi_)O_3 Films Formed by Pulsed Laser Deposition
Atomic Scale Characterization of Nitridation Process on Si(100)-2x1 Surfaces by Radical Nitrogen
Oxidation Processes on H-Terminated Si(100) Surfaces Studied by High-Resolution Electron Energy Loss Spectroscopy

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