Okada Masahisa | Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University

スポンサーリンク

概要

関連著者

もっと見る

著作論文

Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
Thermal Stability and Electrical Properties of (La_2O_3)_(Al_2O_3)_x Composite Films
Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi_2/Si Schottky Contacts Formed from Ni/Ti/Si System
Pr-Oxide-Based Dielectric Films on Ge Substrates
Behavior of Local Charge Trapping Sites in La_2O_3-Al_2O_3 Composite Films under Constant Voltage Stress
Local Current Leakage Characterization in La_2O_3-Al_2O_3 Composite Films by Conductive Atomic Force Microscopy
Nanoscale Observations for Degradation Phenomena in SiO_2 and High-k Gate Insulators Using Conductive-Atomic Force Microscopy
Surface Treatment of Ge(001) Surface by Radical Nitridation
Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors
Composition Dependence of Work Function in Metal (Ni, Pt)-Germanide Gate Electrodes
Film structures and electrical properties of Pr silicate formed by pulsed laser deposition
Hydrogen Effects on Heteroepitaxial Growth of Ge Films on Si(111) Surfaces by Solid Phase Epitaxy
Hydrogen Effects on Si_Ge_x/Si Heteroepitaxial Growth by Si_2H_6- and GeH_4-Source Molecular Beam Epitaxy
Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))

もっと見る

スポンサーリンク