Zaima Shigeaki | Department Of Crystalline Materials Science Graduate School Of Engineering Nagoya University

スポンサーリンク

概要

関連著者

もっと見る

著作論文

Thermal Stability and Electrical Properties of (La_2O_3)_(Al_2O_3)_x Composite Films
Conductance Oscillations in Hopping Conduction Systems Fabricated by Focused Ion Beam Implantation ( Quantum Dot Structures)
Surface Treatment of Ge(001) Surface by Radical Nitridation
Formation of Au and AuSi_x-Pyramids in Separation by Implanted Oxygen Wafers with Si Pillars in SiO_2 Layer
Carrier Transport Properties of Conductive p-Si Wires by Focused Ion Beam Implantation
Quantum Chemical Study of the Oxidation Sites in Hydrogen- and Water-Terminated Si Dimers : Attempt to Understand the Si-Si Back-Bond Oxidation on the Si Surface
Oxide Formation on Si(100)-2×1 Surfaces Studied by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy
Study on Oxidation of Si(100)-2x1 Surfaces by Scanning Tunneling Microscopy/Scanning Tunneling Spectroscopy
Titanium Oxycarbide on TiC (100) Surface
Effect of Pr Valence State on Interfacial Structure and Electrical Properties of Pr Oxide/PrON/Ge Gate Stack Structure
Analysis of Local Leakage Current of Pr-Oxide Thin Films with Conductive Atomic Force Microscopy
Dependence of Effective Work Function Modulation with Phosphorous Segregation on Ni to Si Ratio in Ni Silicide/SiO2 Systems
Structural Analysis of Si-Based Nanodot Arrays Self-Organized by Selective Etching of SiGe/Si Films
Studies on Reaction Processes of Hydrogen and Oxygen Atoms with H_2O-Adsorbed Si(100) Surfaces by High-Resolution Electron Energy Loss Spectroscopy
Improvements of Electrical Characteristics of Hf/p-Si(100) Interfaces by H-Termination
Formation of Metal/Silicon Contacts for ULSI and Induced Defects by Silicidation
Oxidation Processes on H-Terminated Si(100) Surfaces Studied by High-Resolution Electron Energy Loss Spectroscopy
Characterization of Damage of AlO/Ge Gate Stack Structure Induced with Light Radiation during Plasma Nitridation (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
Effects of Light Exposure during Plasma Processing on Electrical Properties of GeO2/Ge Structures
Fabrication and Evaluation of Floating Gate Memories with Surface-Nitrided Si Nanocrystals
Analysis of Microstructures in SiGe Buffer Layers on Silicon-on-Insulator Substrates
Low-Temperature Formation of Epitaxial NiSi2 Layers with Solid-Phase Reaction in Ni/Ti/Si(001) Systems
Formation of Palladium Silicide on Heavily Doped Si(001) Substrates Using Ti Intermediate Layer
Initial Oxidation Processes of H-Terminated Si(100) Surfaces Studied by High-Resolution Electron Energy Loss Spectroscopy
Characterization of Local Current Leakage in La2O3–Al2O3 Composite Films by Conductive Atomic Force Microscopy
Growth and Energy Bandgap Formation of Silicon Nitride Films in Radical Nitridation
Effects of Atomic Layer Deposition-Al2O3 Interface Layers on Interfacial Properties of Ge Metal–Oxide–Semiconductor Capacitors
Epitaxial Growth of (001)ZrN Thin Films on (001)Si by Low Temperature Process
Film Structures and Electrical Properties of Pr Silicate Formed by Pulsed Laser Deposition
Analysis of Local Breakdown Process in Stressed Gate SiO2 Films by Conductive Atomic Force Microscopy
Formation of Palladium Silicide Thin Layers on Si(110) Substrates
Initial Growth Process of TiN Films in Ultrahigh-Vacuum Rapid Thermal Chemical Vapor Deposition
Behavior of Local Charge-Trapping Sites in La2O3–Al2O3 Composite Films under Constant Voltage Stress

もっと見る

スポンサーリンク