SHIBATA Noriyoshi | Japan Fine Ceramics Center

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概要

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著作論文

Formation of Au and AuSi_x-Pyramids in Separation by Implanted Oxygen Wafers with Si Pillars in SiO_2 Layer
12-O-08 Oxidation Behavior of Aluminum Nitride Thin Films on Si and Superalloy Substrates
X-Ray Chemical Analysis of Multilayered Thin Films by Scanning Electron Microscopy and Total-Reflection-Angle X-Ray Spectroscopy
In Situ Transmission Electron Microscopy Observation of Au-Si Interface Reaction
Creation of Highly Oriented Freestanding Carbon Nanotube Film by Sublimating Decomposition of Silicon Carbide Film
Epitaxial Growth of 3C-SiC on Thin Silicon-on-Insulator Substrate by Chemical Vapor Deposition Using Alternating Gas Supply
Fabrication of Aluminum Nitride Thin Film and Its Oxidation Behavior
Room-Temperature Visible Photoluminescence from Single Crystal Si Quantum Well Structures
Surface Etching of 6H-SiC(0001) by Annealing in Vacuum for Obtaining an Atomically Flat Surface
Molten KOH etching with Na2O2 additive for dislocation revelation in 4H-SiC epilayers and substrates
Cathodoluminescence Measurement of Surfaces in Reflection High-Energy Electron Diffraction Experiments
Creation of Highly-Ordered Si Nanocrystal Dots Suspended in SiO_2 by Molecular Beam Epitaxy with Low Energy Oxygen Implantation ( Quantum Dot Structures)
In situ Observation of the Crystallization Process of Ferroelectric Thin Films by Raman Microspectroscopy
Substrate-Polarity Dependence of AIN Single-Crystal Films Grown on 6H-SiC(0001) and (0001^^-) by Molecular Beam Epitaxy
Growth of Aluminum Nitride Films on Silicon by Electron-Cyclotron-Resonance-Assisted Molecular Beam Epitaxy
Diamond Synthesis by Microwave-Plasma Chemical Vapor Deposition Using CH_3Cl and CH_2Cl_2 as Carbon Source
Effect of Mixed Argon and Nitrogen Ion Beam on Cubic Boron Nitride Film Formation in Ion-Beam-Assisted Deposition
Preparation of Thin Silicon-on-Insulator Films by Low-Energy Oxygen Ion Implantation
Forsterite-based Ceramics for Microwave Application with Low Loss and Low Temperature-Coefficient of Relative Permittivity
Production of Highly Oriented Carbon Nanotube Film by Surface Decomposition of Silicon Carbide Polycrystalline Film
Preparation of Silicon-on-Insulator Substrate on Large Free-Standing Carbon Nanotube Film Formation by Surface Decomposition of SiC Film
Effects of Surface Oxides of SiC on Carbon Nanotube Formation by Surface Decomposition
Microscopic Structure of Stepwise Threading Dislocation in 4H-SiC Substrate
Strong White Photoluminescence from Carbon-Incorporated Silicon Oxide Fabricated by Preferential Oxidation of Silicon in Nano-Structured Si:C Layer
Substrate-Polarity Dependence of AlN Single-Crystal Films Grown on 6H–SiC(0001) and ($000\bar{1}$) by Molecular Beam Epitaxy
Near-Infrared Light Emissions from Er-doped ZnO Thin Films Induced by an Electrical Field

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