Creation of Highly-Ordered Si Nanocrystal Dots Suspended in SiO_2 by Molecular Beam Epitaxy with Low Energy Oxygen Implantation (<Special Issue> Quantum Dot Structures)
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概要
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Low energy oxygen implantation during Si molecular beam epitaxy (MBE) allows the formation of highly-oriented Si nanocrystal dots (NCDs) suspended in SiO_2. Transmission electron microscopy reveals the unusual facet morphology of NCD while the spontaneous orientation of the crystal axis of NCD toward [100] is clearly observed. Well-developed {100} and {111} facets are characterized by nearly perfect Si/SiO_2 interfaces. Compelling evidence is found for the epitaxial origin of NCD inherited from the parental two-dimensional Si slabs.
- 社団法人応用物理学会の論文
- 1997-06-30
著者
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ISHIKAWA Yukari
Japan Fine Ceramics Center
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SHIBATA Noriyoshi
Japan Fine Ceramics Center
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Fukatsu Susumu
Department Of Pure And Applied Sciences The University Of Tokyo
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Fukatsu Susumu
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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