Growth of Aluminum Nitride Films on Silicon by Electron-Cyclotron-Resonance-Assisted Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
Aluminum nitride thin films have been prepared on silicon substrates by electron-cyclotron-resonance plasma-assisted molecular beam epitaxy (ECR-MBE). Epitaxial AlN films have been obtained by Al evaporation and 250 eV nitrogen ion irradiation on a clean Si surface at 700℃. AlN films with two kinds of crystal orientations were grown epitaxially on Si(111). The dominant one is AlN (0001)//Si(111); AlN[011^^-0]//Si[112^^-] and the another one is AlN(011^^-0)//Si(111); AlN[0001]//Si[112^^-].
- 社団法人応用物理学会の論文
- 1992-12-01
著者
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ISHIKAWA Yukari
Japan Fine Ceramics Center
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SHIBATA Noriyoshi
Japan Fine Ceramics Center
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Miyauchi Michihiro
Japan Fine Ceramics Center
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