Strong White Photoluminescence from Carbon-Incorporated Silicon Oxide Fabricated by Preferential Oxidation of Silicon in Nano-Structured Si:C Layer
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概要
- 論文の詳細を見る
A new approach to development of light-emitting SiO2:C layers on Si wafer is demonstrated. Carbon-incorporated silicon oxide was fabricated by three-step procedure: (1) formation of the porous silicon (por-Si) layer by ordinary anodization in HF:ethanol solution; (2) carbonization at 1000 °C in acetylene flow (formation of por-Si:C layer); (3) oxidation in the flow of moisturized argon at 800 °C (formation of SiO2:C layer). Resulting SiO2:C layer exhibited very strong and stable white photoluminescence at room temperature. It is shown that high reactivity of water vapor with nano-crystalline silicon and inertness with amorphous carbon play a key role in the formation of light-emitting SiO2:C layer.
- Japan Society of Applied Physicsの論文
- 2007-05-25
著者
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ISHIKAWA Yukari
Japan Fine Ceramics Center
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SHIBATA Noriyoshi
Japan Fine Ceramics Center
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Salonen Jarno
Department of Physics, University of Turku, Turku FI-20014, Finland
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Vasin Andriy
Japan Fine Ceramics Center, Nagoya 456-8587, Japan
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Lehto Vesa-Pekka
Department of Physics, University of Turku, Turku FI-20014, Finland
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