Epitaxial Growth of 3C-SiC on Thin Silicon-on-Insulator Substrate by Chemical Vapor Deposition Using Alternating Gas Supply

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-06-15

著者

• 石川 靖彦

  静岡大学電子工学研究所

• Shibata N

  Japan Fine Ceramics Center Nagoya Jpn

• Ishikawa Y

  Research Center For Interface Quantum Electronics And Graduate School Of Electronics And Information

• Ishikawa Y

  Dowa Mining Co. Ltd. Tokyo

• Ishikawa Y

  Department Of Electrical And Electronics Engineering Nippon Institute Of Technology

• ISHIKAWA Yukari

  Japan Fine Ceramics Center

• SHIBATA Noriyoshi

  Japan Fine Ceramics Center

• Shibata N

  Ntt Optoelectronics Laboratories Nippon Telegraph And Telephone Corporation

• Shimizu T

  Univ. Occupational And Environmental Health Jpn

• Ishikawa Y

  Hokkaido Univ. Sapporo Jpn

• Shibata N

  Japan Fine Ceramics Center Nggoya Jpn

• Shimizu Tadao

  Department Of Physics University Of Tokyo

• Shimizu T

  Department Of Electrical And Electronic Engineering Kanazawa University

• Shimizu T

  Faculty Of Engineering Chiba University

• SHIMIZU Toshiki

  Japan Fine Ceramics Center

• Shimizu Tatsuo

  Faculty Of Technology

• Shimizu T

  Chiba Univ. Chiba Jpn

• Shimizu Tadao

  Department Of Industrial Chemistry Chiba Institute Of Technology

• Shimizu Tadao

  Department Of Physics Faculty Of Science The University Of Tokyo

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